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2009

Atomic precision lithography on Si

Randall, J. N., Lyding, J. W., Schmucker, S., Von Ehr, J. R., Ballard, J., Saini, R., Xu, H. & Ding, Y., Dec 1 2009, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 6, p. 2764-2768 5 p.

Research output: Contribution to journalArticle

Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1): H substrates

Barraza-Lopez, S., Albrecht, P. M. & Lyding, J. W., Aug 6 2009, In : Physical Review B - Condensed Matter and Materials Physics. 80, 4, 045415.

Research output: Contribution to journalArticle

The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons

Ritter, K. A. & Lyding, J. W., Mar 2009, In : Nature Materials. 8, 3, p. 235-242 8 p.

Research output: Contribution to journalArticle

2008
2007

Detecting single-molecule absorption

Gruebele, M., Lyding, J., Carmichael, E. & Ballard, J., Jun 1 2007, In : Materials Today. 10, 6, p. 48-49 2 p.

Research output: Contribution to journalArticle

Frequency-modulated, single-molecule absorption detected by scanning tunneling microscopy

Carmichael, E. S., Ballard, J. B., Lyding, J. W. & Gruebele, M., Mar 1 2007, In : Journal of Physical Chemistry C. 111, 8, p. 3314-3321 8 p.

Research output: Contribution to journalArticle

Lateral manipulation of single-walled carbon nanotubes on H-passivated Si(100) surfaces with an ultrahigh-vacuum scanning tunneling microscope

Albrecht, P. M. & Lyding, J. W., Jan 1 2007, In : Small. 3, 1, p. 146-152 7 p.

Research output: Contribution to journalArticle

Metal-induced gap states at a carbon-nanotube intramolecular heterojunction observed by scanning tunneling microscopy

Ruppalt, L. B. & Lyding, J. W., Feb 1 2007, In : Small. 3, 2, p. 280-284 5 p.

Research output: Contribution to journalArticle

Preferential orientation of a chiral semiconducting carbon nanotube on the locally depassivated Si(100)-2 × 1:H surface identified by scanning tunneling microscopy

Albrecht, P. M., Barraza-Lopez, S. & Lyding, J. W., Aug 1 2007, In : Small. 3, 8, p. 1402-1406 5 p.

Research output: Contribution to journalArticle

2006

Laser absorption scanning tunneling microscopy of carbon nanotubes

Ballard, J. B., Carmichael, E. S., Shi, D., Lyding, J. W. & Gruebele, M., Jan 1 2006, In : Nano Letters. 6, 1, p. 45-49 5 p.

Research output: Contribution to journalArticle

2004

Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy

Liu, F. Y., Griffin, P. B., Plummer, J. D., Lyding, J. W., Moran, J. M., Richards, J. F. & Kulig, L., Jan 1 2004, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22, 1, p. 422-426 5 p.

Research output: Contribution to journalArticle

2003

An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps

Cheng, K. & Lyding, J. W., Oct 1 2003, In : IEEE Electron Device Letters. 24, 10, p. 655-657 3 p.

Research output: Contribution to journalArticle

Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces

Albrecht, P. M. & Lyding, J. W., Dec 15 2003, In : Applied Physics Letters. 83, 24, p. 5029-5031 3 p.

Research output: Contribution to journalArticle

2002

Adsorption of cobalt phthalocyanine on Si(1 0 0)2 × 1 and Si(1 0 0)2 × 1:H surfaces studied by scanning tunneling microscopy and spectroscopy

Liu, L., Yu, J., Viernes, N. O. L., Moore, J. S. & Lyding, J. W., Sep 10 2002, In : Surface Science. 516, 1-2, p. 118-126 9 p.

Research output: Contribution to journalArticle

Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

Yang, J., Thornton, T. J., Goodnick, S. M., Kozicki, M. & Lyding, J., Mar 1 2002, In : Physica B: Condensed Matter. 314, 1-4, p. 354-357 4 p.

Research output: Contribution to journalArticle

Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Cheng, K., Lee, J., Hess, K., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Mar 1 2002, In : IEEE Transactions on Electron Devices. 49, 3, p. 529-531 3 p.

Research output: Contribution to journalArticle

Subsurface dopant-induced features on the Si(100)2 × 1:H surface: Fundamental study and applications

Liu, L., Yu, J. & Lyding, J. W., Dec 1 2002, In : IEEE Transactions on Nanotechnology. 1, 4, p. 176-183 8 p.

Research output: Contribution to journalArticle

Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D

Hersam, M. C., Guisinger, N. P., Lee, J., Cheng, K. & Lyding, J. W., Jan 14 2002, In : Applied Physics Letters. 80, 2, p. 201-203 3 p.

Research output: Contribution to journalArticle

2001

A new technique to quantify deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., May 1 2001, In : IEEE Electron Device Letters. 22, 5, p. 203-205 3 p.

Research output: Contribution to journalArticle

Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

Hersam, M. C., Guisinger, N. P., Lyding, J. W., Thompson, D. S. & Moore, J. S., Feb 12 2001, In : Applied Physics Letters. 78, 7, p. 886-888 3 p.

Research output: Contribution to journalArticle

Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Liu, L., Yu, J. & Lyding, J. W., Jan 15 2001, In : Applied Physics Letters. 78, 3, p. 386-388 3 p.

Research output: Contribution to journalArticle

Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Chen, Z., Cheng, K., Lee, J., Lyding, J. W., Hess, K. & Chetlur, S., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 813-815 3 p.

Research output: Contribution to journalArticle

Deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., Sep 1 2001, In : IEEE Electron Device Letters. 22, 9, p. 441-443 3 p.

Research output: Contribution to journalArticle

Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Cheng, K., Lee, J., Chen, Z., Shah, S., Hess, K., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Aug 1 2001, In : Microelectronic Engineering. 56, 3-4, p. 353-358 6 p.

Research output: Contribution to journalArticle

Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Hess, K. & Lyding, J. W., Mar 26 2001, In : Applied Physics Letters. 78, 13, p. 1882-1884 3 p.

Research output: Contribution to journalArticle

Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

Cheng, K., Hess, K. & Lyding, J. W., Dec 15 2001, In : Journal of Applied Physics. 90, 12, p. 6536-6538 3 p.

Research output: Contribution to journalArticle

Separation of hot-carrier-induced interface trap creation and oxide charge trapping in PMOSFETs studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Apr 1 2001, In : IEEE Electron Device Letters. 22, 4, p. 188-190 3 p.

Research output: Contribution to journalArticle

The physics of determining chip reliability

Hess, K., Haggag, A., McMahon, W., Cheng, K., Lee, J. & Lyding, J., May 1 2001, In : IEEE Circuits and Devices Magazine. 17, 3, p. 33-38 6 p.

Research output: Contribution to journalArticle

2000

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Jinju, L., Cheng, K., Chen, Z., Hess, K., Lyding, J. W., Young-Kwang, K., Seung, L., Young-Wug, K. & Kwang-Pyuk, S., May 1 2000, In : IEEE Electron Device Letters. 21, 5, p. 221-223 3 p.

Research output: Contribution to journalArticle

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Cheng, K., Lee, J. & Lyding, J. W., Oct 9 2000, In : Applied Physics Letters. 77, 15, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope

Foley, E. T., Kam, A. F. & Lyding, J. W., Sep 2000, In : Review of Scientific Instruments. 71, 9, p. 3428-3435 8 p.

Research output: Contribution to journalArticle

Experimental evidence of Si-H bond energy variation at SiO2-Si interface

Cheng, K., Lee, J. & Lyding, J. W., Nov 20 2000, In : Applied Physics Letters. 77, 21, p. 3388-3390 3 p.

Research output: Contribution to journalArticle

Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications

Lee, J., Cheng, K., Lyding, J. W. & Salemink, H. W. M., Jan 1 2000, In : Materials Research Society Symposium-Proceedings. 609, p. A2681-A2686

Research output: Contribution to journalArticle

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

1999

An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes?

Hess, K., Lee, J., Chen, Z., Lyding, J. W., Kim, Y. K., Kim, B. S., Lee, Y. H., Kim, Y. W. & Suh, K. P., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1914-1916 3 p.

Research output: Contribution to journalArticle

Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

Tao, M. & Lyding, J. W., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 2020-2022 3 p.

Research output: Contribution to journalArticle

The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors

Lee, J., Epstein, Y., Berti, A. C., Huber, J., Hess, K. & Lyding, J. W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 8, p. 1812-1813 2 p.

Research output: Contribution to journalArticle

1998

Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)

Foley, E. T., Kam, A. F., Lyding, J. W. & Avouris, P., Jan 1 1998, In : Physical review letters. 80, 6, p. 1336-1339 4 p.

Research output: Contribution to journalArticle

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Hess, K., Kizilyalli, I. C. & Lyding, J. W., Dec 1 1998, In : IEEE Transactions on Electron Devices. 45, 2, p. 406-416 11 p.

Research output: Contribution to journalArticle

Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime

Hess, K., Register, L. F., Tuttle, B., Lyding, J. & Kizilyalli, I. C., Oct 16 1998, In : Physica E: Low-Dimensional Systems and Nanostructures. 3, 1-3, p. 1-7 7 p.

Research output: Contribution to journalArticle

Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems

Kizilyalli, I. C., Abeln, G. C., Chen, Z., Lee, J., Weber, G., Kotzias, B., Chetlur, S., Lyding, J. W. & Hess, K., Nov 1 1998, In : IEEE Electron Device Letters. 19, 11, p. 444-446 3 p.

Research output: Contribution to journalArticle

1997

Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

Kizilyalli, I. C., Lyding, J. W. & Hess, K., Mar 1 1997, In : IEEE Electron Device Letters. 18, 3, p. 81-83 3 p.

Research output: Contribution to journalArticle