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Research Output 1980 2019

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Article
2009

The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons

Ritter, K. A. & Lyding, J. W., Mar 2009, In : Nature Materials. 8, 3, p. 235-242 8 p.

Research output: Contribution to journalArticle

Nanoribbons
Carbon Nanotubes
Graphite
Electronic properties
Graphene
2008
Graphite
Scanning tunneling microscopy
Graphene
Nanoelectronics
Ultrahigh vacuum
2007
Carbon Nanotubes
Charge transfer
Single-walled carbon nanotubes (SWCN)
Carbon nanotubes
Nanotubes

Detecting single-molecule absorption

Gruebele, M., Lyding, J., Carmichael, E. & Ballard, J., Jun 1 2007, In : Materials Today. 10, 6, p. 48-49 2 p.

Research output: Contribution to journalArticle

Microscopes
microscopes
Scanning
spectral mixture analysis
Molecules

Frequency-modulated, single-molecule absorption detected by scanning tunneling microscopy

Carmichael, E. S., Ballard, J. B., Lyding, J. W. & Gruebele, M., Mar 1 2007, In : Journal of Physical Chemistry C. 111, 8, p. 3314-3321 8 p.

Research output: Contribution to journalArticle

Scanning tunneling microscopy
scanning tunneling microscopy
Frequency modulation
frequency modulation
Molecules

Lateral manipulation of single-walled carbon nanotubes on H-passivated Si(100) surfaces with an ultrahigh-vacuum scanning tunneling microscope

Albrecht, P. M. & Lyding, J. W., Jan 1 2007, In : Small. 3, 1, p. 146-152 7 p.

Research output: Contribution to journalArticle

Scanning Tunnelling Microscopy
Carbon Nanotubes
Ultrahigh vacuum
Single-walled carbon nanotubes (SWCN)
Vacuum
Ultrahigh vacuum
Single-walled carbon nanotubes (SWCN)
Hydrogen
Desorption
Microscopes

Metal-induced gap states at a carbon-nanotube intramolecular heterojunction observed by scanning tunneling microscopy

Ruppalt, L. B. & Lyding, J. W., Feb 1 2007, In : Small. 3, 2, p. 280-284 5 p.

Research output: Contribution to journalArticle

Scanning Tunnelling Microscopy
Carbon Nanotubes
Scanning tunneling microscopy
Single-walled carbon nanotubes (SWCN)
Heterojunctions

Preferential orientation of a chiral semiconducting carbon nanotube on the locally depassivated Si(100)-2 × 1:H surface identified by scanning tunneling microscopy

Albrecht, P. M., Barraza-Lopez, S. & Lyding, J. W., Aug 1 2007, In : Small. 3, 8, p. 1402-1406 5 p.

Research output: Contribution to journalArticle

Scanning Tunnelling Microscopy
Carbon Nanotubes
Scanning tunneling microscopy
Carbon nanotubes
Spectrum Analysis
Single-walled carbon nanotubes (SWCN)
Hydrogen
Spectroscopy
Scanning
Substrates
2006

Laser absorption scanning tunneling microscopy of carbon nanotubes

Ballard, J. B., Carmichael, E. S., Shi, D., Lyding, J. W. & Gruebele, M., Jan 1 2006, In : Nano Letters. 6, 1, p. 45-49 5 p.

Research output: Contribution to journalArticle

Carbon Nanotubes
Scanning tunneling microscopy
scanning tunneling microscopy
Carbon nanotubes
carbon nanotubes
2004
Single-walled carbon nanotubes (SWCN)
Microscopes
carbon nanotubes
microscopes
Scanning

Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy

Liu, F. Y., Griffin, P. B., Plummer, J. D., Lyding, J. W., Moran, J. M., Richards, J. F. & Kulig, L., Jan 1 2004, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22, 1, p. 422-426 5 p.

Research output: Contribution to journalArticle

Microscopic examination
Capacitance
capacitance
Spectroscopy
microscopy
2003

An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps

Cheng, K. & Lyding, J. W., Oct 1 2003, In : IEEE Electron Device Letters. 24, 10, p. 655-657 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
MOSFET devices
Passivation
Analytical models
Ultrahigh vacuum
Single-walled carbon nanotubes (SWCN)
Nanotubes
ultrahigh vacuum
nanotubes

Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces

Albrecht, P. M. & Lyding, J. W., Dec 15 2003, In : Applied Physics Letters. 83, 24, p. 5029-5031 3 p.

Research output: Contribution to journalArticle

image resolution
ultrahigh vacuum
scanning tunneling microscopy
carbon nanotubes
hydrogen
2002

Adsorption of cobalt phthalocyanine on Si(1 0 0)2 × 1 and Si(1 0 0)2 × 1:H surfaces studied by scanning tunneling microscopy and spectroscopy

Liu, L., Yu, J., Viernes, N. O. L., Moore, J. S. & Lyding, J. W., Sep 10 2002, In : Surface Science. 516, 1-2, p. 118-126 9 p.

Research output: Contribution to journalArticle

Scanning tunneling microscopy
scanning tunneling microscopy
Cobalt
cobalt
Spectroscopy

Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

Yang, J., Thornton, T. J., Goodnick, S. M., Kozicki, M. & Lyding, J. W., Mar 1 2002, In : Physica B: Condensed Matter. 314, 1-4, p. 354-357 4 p.

Research output: Contribution to journalArticle

Hot carriers
Electron spectroscopy
Hot electrons
Silicon
hot electrons

Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

Cheng, K., Lee, J., Hess, K., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Mar 1 2002, In : IEEE Transactions on Electron Devices. 49, 3, p. 529-531 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Silicon oxides
Silicon
Passivation

Subsurface dopant-induced features on the Si(100)2 × 1:H surface: Fundamental study and applications

Liu, L., Yu, J. & Lyding, J. W., Dec 1 2002, In : IEEE Transactions on Nanotechnology. 1, 4, p. 176-183 8 p.

Research output: Contribution to journalArticle

Doping (additives)
Scanning tunneling microscopy
Surface states
Arsenic
Boron

Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D

Hersam, M. C., Guisinger, N. P., Lee, J., Cheng, K. & Lyding, J. W., Jan 14 2002, In : Applied Physics Letters. 80, 2, p. 201-203 3 p.

Research output: Contribution to journalArticle

passivity
scanning tunneling microscopy
temperature
desorption
vapor phases
2001

A new technique to quantify deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., May 1 2001, In : IEEE Electron Device Letters. 22, 5, p. 203-205 3 p.

Research output: Contribution to journalArticle

MOS devices
Deuterium
Passivation
Hydrogen
Silicon oxides

Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

Hersam, M. C., Guisinger, N. P., Lyding, J. W., Thompson, D. S. & Moore, J. S., Feb 12 2001, In : Applied Physics Letters. 78, 7, p. 886-888 3 p.

Research output: Contribution to journalArticle

x ray spectroscopy
scanning tunneling microscopy
photoelectron spectroscopy
nanofabrication
meteorology

Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Liu, L., Yu, J. & Lyding, J. W., Jan 15 2001, In : Applied Physics Letters. 78, 3, p. 386-388 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
boron
atoms
ultrahigh vacuum
electronic structure

Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Chen, Z., Cheng, K., Lee, J., Lyding, J. W., Hess, K. & Chetlur, S., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 813-815 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
MOSFET devices
Isotopes
Degradation

Deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., Sep 1 2001, In : IEEE Electron Device Letters. 22, 9, p. 441-443 3 p.

Research output: Contribution to journalArticle

MOS devices
Deuterium
Passivation
Hydrogen
Hot electrons

Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Cheng, K., Lee, J., Chen, Z., Shah, S., Hess, K., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Aug 1 2001, In : Microelectronic Engineering. 56, 3-4, p. 353-358 6 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
pressure dependence
deuterium
CMOS

Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Hess, K. & Lyding, J. W., Mar 26 2001, In : Applied Physics Letters. 78, 13, p. 1882-1884 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
isotope effect
deuterium
transistors

Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

Cheng, K., Hess, K. & Lyding, J. W., Dec 15 2001, In : Journal of Applied Physics. 90, 12, p. 6536-6538 3 p.

Research output: Contribution to journalArticle

deuterium
kinetics
hydrogen
semiconductor devices
metal oxide semiconductors
carrier injection
hot electrons
metal oxide semiconductors
deuterium
field effect transistors

Separation of hot-carrier-induced interface trap creation and oxide charge trapping in PMOSFETs studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Apr 1 2001, In : IEEE Electron Device Letters. 22, 4, p. 188-190 3 p.

Research output: Contribution to journalArticle

Charge trapping
Hot carriers
Deuterium
Isotopes
Oxides

The physics of determining chip reliability

Hess, K., Haggag, A., McMahon, W., Cheng, K., Lee, J. & Lyding, J. W., May 1 2001, In : IEEE Circuits and Devices Magazine. 17, 3, p. 33-38 6 p.

Research output: Contribution to journalArticle

Physics
chips
Statistics
Degradation
Defects
2000

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Jinju, L., Cheng, K., Chen, Z., Hess, K., Lyding, J. W., Young-Kwang, K., Seung, L., Young-Wug, K. & Kwang-Pyuk, S., May 1 2000, In : IEEE Electron Device Letters. 21, 5, p. 221-223 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Transistors
Annealing
Secondary ion mass spectrometry

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Cheng, K., Lee, J. & Lyding, J. W., Oct 9 2000, In : Applied Physics Letters. 77, 15, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
deuterium
hydrogen
transistors

Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope

Foley, E. T., Kam, A. F. & Lyding, J. W., Sep 2000, In : Review of Scientific Instruments. 71, 9, p. 3428-3435 8 p.

Research output: Contribution to journalArticle

Ultrahigh vacuum
Cryogenics
ultrahigh vacuum
cryogenics
Microscopes

Experimental evidence of Si-H bond energy variation at SiO2-Si interface

Cheng, K., Lee, J. & Lyding, J. W., Nov 20 2000, In : Applied Physics Letters. 77, 21, p. 3388-3390 3 p.

Research output: Contribution to journalArticle

degradation
energy
semiconductor devices
metal oxide semiconductors
desorption

Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications

Lee, J., Cheng, K., Lyding, J. W. & Salemink, H. W. M., Jan 1 2000, In : Materials Research Society Symposium-Proceedings. 609, p. A2681-A2686

Research output: Contribution to journalArticle

oxynitrides
Optical waveguides
Silicon
Isotopes
optical waveguides

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

Hot carriers
MOSFET devices
Isotopes
Hot electrons
Oxides
1999

An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes?

Hess, K., Lee, J., Chen, Z., Lyding, J. W., Kim, Y. K., Kim, B. S., Lee, Y. H., Kim, Y. W. & Suh, K. P., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1914-1916 3 p.

Research output: Contribution to journalArticle

Hot electrons
Isotopes
Degradation
Oxides
Defects

Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

Tao, M. & Lyding, J. W., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 2020-2022 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
defects

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I. & Chetlur, S., 1999, In : Technical Digest - International Electron Devices Meeting. p. 85-88 4 p.

Research output: Contribution to journalArticle

Hot carriers
MOSFET devices
Isotopes
transistors
traps

The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors

Lee, J., Epstein, Y., Berti, A. C., Huber, J., Hess, K. & Lyding, J. W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 8, p. 1812-1813 2 p.

Research output: Contribution to journalArticle

Deuterium
Passivation
Transistors
Sintering
Processing
1998
selective surfaces
nanofabrication
Chemisorption
Nanotechnology
chemisorption

Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)

Foley, E. T., Kam, A. F., Lyding, J. W. & Avouris, P., Jan 1 1998, In : Physical review letters. 80, 6, p. 1336-1339 4 p.

Research output: Contribution to journalArticle

cryogenics
deuterium
desorption
hydrogen
isotope effect

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Hess, K., Kizilyalli, I. C. & Lyding, J. W., Dec 1 1998, In : IEEE Transactions on Electron Devices. 45, 2, p. 406-416 11 p.

Research output: Contribution to journalArticle

Hot electrons
Deuterium
Silicon oxides
Isotopes
Metals

Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime

Hess, K., Register, L. F., Tuttle, B., Lyding, J. W. & Kizilyalli, I. C., Oct 16 1998, In : Physica E: Low-Dimensional Systems and Nanostructures. 3, 1-3, p. 1-7 7 p.

Research output: Contribution to journalArticle

Electronic states
Isotopes
isotope effect
Hydrogen
Nanostructures

Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems

Kizilyalli, I. C., Abeln, G. C., Chen, Z., Lee, J., Weber, G., Kotzias, B., Chetlur, S., Lyding, J. W. & Hess, K., Nov 1 1998, In : IEEE Electron Device Letters. 19, 11, p. 444-446 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Metals
Isotopes
Hydrogen
Deuterium
deuterium
CMOS
sintering
Transistors
1997

Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

Kizilyalli, I. C., Lyding, J. W. & Hess, K., Mar 1 1997, In : IEEE Electron Device Letters. 18, 3, p. 81-83 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Metals
Hydrogen
Annealing

Nanopatterning organic monolayers on Si(100) by selective chemisorption of norbornadiene

Abeln, G. C., Lee, S. Y., Lyding, J. W., Thompson, D. S. & Moore, J. S., May 19 1997, In : Applied Physics Letters. 70, 20, p. 2747-2749 3 p.

Research output: Contribution to journalArticle

dienes
chemisorption
chemical reactions
templates
selectivity