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Research Output 1980 2019

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Paper
2005

Deuterium passivation in CMOS technology

Lyding, J. W., Lee, J., Cheng, K., Albrecht, P. M., Ruppalt, L. B. & Hess, K., Dec 1 2005, p. 135-143. 9 p.

Research output: Contribution to conferencePaper

Deuterium
Passivation
Desorption
Hydrogen
Hot carriers
2000

Probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: Models for deep-submicron transistors and optical interconnects

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J. W., Dec 1 2000, p. 179-182. 4 p.

Research output: Contribution to conferencePaper

Optical interconnects
Transistors
Physics
Activation energy
Degradation
1999

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Kim, Y. K., Lee, S. H., Lee, H. S., Kim, B. S., Lee, Y. H., Lee, J., Cheng, K., Chen, Z., Hess, K. & Lyding, J. W., Dec 1 1999, p. 65-68. 4 p.

Research output: Contribution to conferencePaper

Deuterium
Sintering
Plasmas
Interface states
Electrodes
Deuterium
Annealing
Plasmas
Polysilicon
Temperature

Effect of low temperature deuterium annealing on plasma process induced damage

Lee, S. H., Kim, Y. K., Lee, Y. H., Kang, H. S., Ahn, C. G., Kang, B. K., Lee, J., Cheng, K., Chen, Z., Hess, K. & Lyding, J. W., Dec 1 1999, p. 188-191. 4 p.

Research output: Contribution to conferencePaper

Deuterium
Annealing
Plasmas
Polysilicon
Temperature