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Research Output 1980 2019

2001

Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

Hersam, M. C., Guisinger, N. P., Lyding, J. W., Thompson, D. S. & Moore, J. S., Feb 12 2001, In : Applied Physics Letters. 78, 7, p. 886-888 3 p.

Research output: Contribution to journalArticle

x ray spectroscopy
scanning tunneling microscopy
photoelectron spectroscopy
nanofabrication
meteorology

Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Liu, L., Yu, J. & Lyding, J. W., Jan 15 2001, In : Applied Physics Letters. 78, 3, p. 386-388 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
boron
atoms
ultrahigh vacuum
electronic structure

Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Chen, Z., Cheng, K., Lee, J., Lyding, J. W., Hess, K. & Chetlur, S., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 813-815 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
MOSFET devices
Isotopes
Degradation

Deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., Sep 1 2001, In : IEEE Electron Device Letters. 22, 9, p. 441-443 3 p.

Research output: Contribution to journalArticle

MOS devices
Deuterium
Passivation
Hydrogen
Hot electrons

Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Cheng, K., Lee, J., Chen, Z., Shah, S., Hess, K., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Aug 1 2001, In : Microelectronic Engineering. 56, 3-4, p. 353-358 6 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
pressure dependence
deuterium
CMOS
MOS devices
Silicon oxides
Ultrahigh vacuum
Deuterium
silicon oxides

High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J., Jan 1 2001, IEEE International Reliability Physics Symposium Proceedings. Vol. 2001-January. p. 271-279 9 p. 922913

Research output: Chapter in Book/Report/Conference proceedingChapter

Hot carriers
Optical interconnects
Transistors
Degradation
Defects

High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J., Jan 1 2001, In : Annual Proceedings - Reliability Physics (Symposium). p. 271-279 9 p.

Research output: Contribution to journalConference article

Optical interconnects
Transistors
Degradation
Defects
Bragg gratings

Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Hess, K. & Lyding, J. W., Mar 26 2001, In : Applied Physics Letters. 78, 13, p. 1882-1884 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
isotope effect
deuterium
transistors

Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

Cheng, K., Hess, K. & Lyding, J. W., Dec 15 2001, In : Journal of Applied Physics. 90, 12, p. 6536-6538 3 p.

Research output: Contribution to journalArticle

deuterium
kinetics
hydrogen
semiconductor devices
metal oxide semiconductors
carrier injection
hot electrons
metal oxide semiconductors
deuterium
field effect transistors

Separation of hot-carrier-induced interface trap creation and oxide charge trapping in PMOSFETs studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Apr 1 2001, In : IEEE Electron Device Letters. 22, 4, p. 188-190 3 p.

Research output: Contribution to journalArticle

Charge trapping
Hot carriers
Deuterium
Isotopes
Oxides

The physics of determining chip reliability

Hess, K., Haggag, A., McMahon, W., Cheng, K., Lee, J. & Lyding, J. W., May 1 2001, In : IEEE Circuits and Devices Magazine. 17, 3, p. 33-38 6 p.

Research output: Contribution to journalArticle

Physics
chips
Statistics
Degradation
Defects
2000

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Jinju, L., Cheng, K., Chen, Z., Hess, K., Lyding, J. W., Young-Kwang, K., Seung, L., Young-Wug, K. & Kwang-Pyuk, S., May 1 2000, In : IEEE Electron Device Letters. 21, 5, p. 221-223 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Transistors
Annealing
Secondary ion mass spectrometry

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Cheng, K., Lee, J. & Lyding, J. W., Oct 9 2000, In : Applied Physics Letters. 77, 15, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
deuterium
hydrogen
transistors

Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope

Foley, E. T., Kam, A. F. & Lyding, J. W., Sep 2000, In : Review of Scientific Instruments. 71, 9, p. 3428-3435 8 p.

Research output: Contribution to journalArticle

Ultrahigh vacuum
Cryogenics
ultrahigh vacuum
cryogenics
Microscopes

Experimental evidence of Si-H bond energy variation at SiO2-Si interface

Cheng, K., Lee, J. & Lyding, J. W., Nov 20 2000, In : Applied Physics Letters. 77, 21, p. 3388-3390 3 p.

Research output: Contribution to journalArticle

degradation
energy
semiconductor devices
metal oxide semiconductors
desorption

Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics

Hersam, M. C., Lee, J., Guisinger, N. P. & Lyding, J. W., May 2000, In : Superlattices and Microstructures. 27, 5, p. 583-591 9 p.

Research output: Contribution to journalConference article

Nanoelectronics
manipulators
Desorption
CMOS
Metals
Microscopes
microscopes
Scanning
Imaging techniques
Molecules

Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications

Lee, J., Cheng, K., Lyding, J. W. & Salemink, H. W. M., Jan 1 2000, In : Materials Research Society Symposium-Proceedings. 609, p. A2681-A2686

Research output: Contribution to journalArticle

oxynitrides
Optical waveguides
Silicon
Isotopes
optical waveguides

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

Hot carriers
MOSFET devices
Isotopes
Hot electrons
Oxides

Probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: Models for deep-submicron transistors and optical interconnects

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J. W., Dec 1 2000, p. 179-182. 4 p.

Research output: Contribution to conferencePaper

Optical interconnects
Transistors
Physics
Activation energy
Degradation

Silicon-based molecular nanotechnology

Hersam, M. C., Guisinger, N. P. & Lyding, J. W., Jun 1 2000, In : Nanotechnology. 11, 2, p. 70-76 7 p.

Research output: Contribution to journalConference article

Silicon
nanotechnology
Nanotechnology
Molecules
silicon

Simulation of Si-SiO2 defect generation in CMOS chips: From atomistic structure to chip failure rates

Hess, K., Haggag, A., McMahon, W., Fischer, B., Cheng, K., Lee, J. & Lyding, J. W., Dec 1 2000, In : Technical Digest - International Electron Devices Meeting. p. 93-95 3 p.

Research output: Contribution to journalConference article

CMOS
chips
Degradation
Defects
time dependence
1999

An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes?

Hess, K., Lee, J., Chen, Z., Lyding, J. W., Kim, Y. K., Kim, B. S., Lee, Y. H., Kim, Y. W. & Suh, K. P., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1914-1916 3 p.

Research output: Contribution to journalArticle

Hot electrons
Isotopes
Degradation
Oxides
Defects

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Kim, Y. K., Lee, S. H., Lee, H. S., Kim, B. S., Lee, Y. H., Lee, J., Cheng, K., Chen, Z., Hess, K. & Lyding, J. W., Dec 1 1999, p. 65-68. 4 p.

Research output: Contribution to conferencePaper

Deuterium
Sintering
Plasmas
Interface states
Electrodes

Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

Hersam, M. C., Abeln, G. C. & Lyding, J. W., Jun 1999, In : Microelectronic Engineering. 47, 1, p. 235-237 3 p.

Research output: Contribution to journalConference article

nanofabrication
p-n junctions
Lithography
Nanostructures
lithography

Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

Tao, M. & Lyding, J. W., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 2020-2022 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
defects

Effect of low temperature deuterium annealing on plasma process induced damage

Lee, S. H., Kim, Y. K., Lee, Y. H., Kang, H. S., Ahn, C. G., Kang, B. K., Lee, J., Cheng, K., Chen, Z., Hess, K. & Lyding, J. W., Dec 1 1999, p. 188-191. 4 p.

Research output: Contribution to conferencePaper

Deuterium
Annealing
Plasmas
Polysilicon
Temperature

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I. & Chetlur, S., 1999, In : Technical Digest - International Electron Devices Meeting. p. 85-88 4 p.

Research output: Contribution to journalArticle

Hot carriers
MOSFET devices
Isotopes
transistors
traps

The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors

Lee, J., Epstein, Y., Berti, A. C., Huber, J., Hess, K. & Lyding, J. W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 8, p. 1812-1813 2 p.

Research output: Contribution to journalArticle

Deuterium
Passivation
Transistors
Sintering
Processing

Theory of channel hot-carrier degradation in MOSFETs

Hess, K., Register, L. F., McMahon, W., Tuttle, B., Aktas, O., Ravaioli, U., Lyding, J. W. & Kizilyalli, I. C., Dec 1 1999, In : Physica B: Condensed Matter. 272, 1-4, p. 527-531 5 p.

Research output: Contribution to journalConference article

Hot carriers
MOSFET devices
metal oxide semiconductors
field effect transistors
degradation
1998

Alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface

Chen, Z., Lee, J. & Lyding, J. W., Jan 1 1998, In : Materials Research Society Symposium - Proceedings. 513, p. 313-317 5 p.

Research output: Contribution to journalConference article

Hot carriers
degradation
Degradation
traps
approximation
selective surfaces
nanofabrication
Chemisorption
Nanotechnology
chemisorption

Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)

Foley, E. T., Kam, A. F., Lyding, J. W. & Avouris, P., Jan 1 1998, In : Physical review letters. 80, 6, p. 1336-1339 4 p.

Research output: Contribution to journalArticle

cryogenics
deuterium
desorption
hydrogen
isotope effect

Deuterium process of CMOS devices: New phenomena and dramatic improvement

Chen, Z., Lee, J., Lyding, J. W. & Hess, K., Jan 1 1998, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 180-181 2 p.

Research output: Contribution to journalConference article

Deuterium
Degradation
Electric potential
Temperature

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Hess, K., Kizilyalli, I. C. & Lyding, J. W., Dec 1 1998, In : IEEE Transactions on Electron Devices. 45, 2, p. 406-416 11 p.

Research output: Contribution to journalArticle

Hot electrons
Deuterium
Silicon oxides
Isotopes
Metals

Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime

Hess, K., Register, L. F., Tuttle, B., Lyding, J. W. & Kizilyalli, I. C., Oct 16 1998, In : Physica E: Low-Dimensional Systems and Nanostructures. 3, 1-3, p. 1-7 7 p.

Research output: Contribution to journalArticle

Electronic states
Isotopes
isotope effect
Hydrogen
Nanostructures

Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems

Kizilyalli, I. C., Abeln, G. C., Chen, Z., Lee, J., Weber, G., Kotzias, B., Chetlur, S., Lyding, J. W. & Hess, K., Nov 1 1998, In : IEEE Electron Device Letters. 19, 11, p. 444-446 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Metals
Isotopes
Hydrogen

Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

Kizilyalli, I. C., Abeln, G., Chen, Z., Weber, G., Register, F., Harris, E., Chetlur, S., Higashi, G., Schofieled, M., Sen, S., Kotzias, B., Roy, P. K., Lyding, J. & Hess, K., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3506, p. 141-146 6 p.

Research output: Contribution to journalConference article

Hot carriers
Deuterium
deuterium
CMOS
manufacturing
Deuterium
deuterium
CMOS
sintering
Transistors

Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology

Lyding, J. W., Hess, K., Abeln, G. C., Thompson, D. S., Moore, J. S., Hersam, M. C., Foley, E. T., Lee, J., Chen, Z., Hwang, S. T., Choi, H., Avouris, P. & Kizilyalli, I. C., Jan 1 1998, In : Applied Surface Science. 130-132, p. 221-230 10 p.

Research output: Contribution to journalConference article

Deuterium
Ultrahigh vacuum
Scanning tunneling microscopy
Silicon
Nanotechnology
1997

Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

Kizilyalli, I. C., Lyding, J. W. & Hess, K., Mar 1 1997, In : IEEE Electron Device Letters. 18, 3, p. 81-83 3 p.

Research output: Contribution to journalArticle

Hot carriers
Deuterium
Metals
Hydrogen
Annealing

Nanopatterning organic monolayers on Si(100) by selective chemisorption of norbornadiene

Abeln, G. C., Lee, S. Y., Lyding, J. W., Thompson, D. S. & Moore, J. S., May 19 1997, In : Applied Physics Letters. 70, 20, p. 2747-2749 3 p.

Research output: Contribution to journalArticle

dienes
chemisorption
chemical reactions
templates
selectivity

UHV STM nanofabrication: Progress, technology spin-offs, and challenges

Lyding, J. W., Dec 1 1997, In : Proceedings of the IEEE. 85, 4, p. 589-600 12 p.

Research output: Contribution to journalArticle

Ultrahigh vacuum
Nanotechnology
Microscopes
Deuterium
Scanning
1996

Breaking individual chemical bonds via STM-induced excitations

Avouris, P., Walkup, R. E., Rossi, A. R., Akpati, H. C., Nordlander, P., Shen, T. C., Abeln, G. C. & Lyding, J. W., Aug 1 1996, In : Surface Science. 363, 1-3, p. 368-377 10 p.

Research output: Contribution to journalArticle

Chemical bonds
chemical bonds
Desorption
Atoms
desorption

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E. & Liu, H. C., Dec 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 203-208 6 p.

Research output: Contribution to journalConference article

Quantum well infrared photodetectors
quantum well infrared photodetectors
Molecular beams
molecular beams
Gases

Deuterium post metal annealing of MOSFETs for improved hot carrier reliability

Kizilyalli, I. C., Lyding, J. W. & Hess, K., Jan 1 1996, p. 14-15. 2 p.

Research output: Contribution to conferencePaper

Hot carriers
Deuterium
Hot electrons
Annealing
Metals

EVAC: A virtual environment for control of remote imaging instrumentation

Potter, C., Brady, R., Moran, P., Gregory, C., Carragher, B., Kisseberth, N., Lyding, J. W. & Lindquist, J., Jul 1 1996, In : IEEE Computer Graphics and Applications. 16, 4, p. 62-66 5 p.

Research output: Contribution to journalArticle

HIgh speed networks
Remote control
Virtual reality
Imaging techniques

Nanoscale patterning and selective chemistry of silicon surfaces by ultrahigh-vacuum scanning tunneling microscopy

Lyding, J. W., Shen, T. C., Abeln, G. C., Wang, C. & Tucker, J. R., Jun 1 1996, In : Nanotechnology. 7, 2, p. 128-133 6 p.

Research output: Contribution to journalArticle

Ultrahigh vacuum
Scanning tunneling microscopy
Silicon
Hydrogen
Electrons