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Research Output

2001

A new technique to quantify deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., May 1 2001, In : IEEE Electron Device Letters. 22, 5, p. 203-205 3 p.

Research output: Contribution to journalArticle

Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

Hersam, M. C., Guisinger, N. P., Lyding, J. W., Thompson, D. S. & Moore, J. S., Feb 12 2001, In : Applied Physics Letters. 78, 7, p. 886-888 3 p.

Research output: Contribution to journalArticle

Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Liu, L., Yu, J. & Lyding, J. W., Jan 15 2001, In : Applied Physics Letters. 78, 3, p. 386-388 3 p.

Research output: Contribution to journalArticle

Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Chen, Z., Cheng, K., Lee, J., Lyding, J. W., Hess, K. & Chetlur, S., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 813-815 3 p.

Research output: Contribution to journalArticle

Deuterium passivation of interface traps in MOS devices

Cheng, K., Hess, K. & Lyding, J. W., Sep 1 2001, In : IEEE Electron Device Letters. 22, 9, p. 441-443 3 p.

Research output: Contribution to journalArticle

Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Cheng, K., Lee, J., Chen, Z., Shah, S., Hess, K., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Aug 1 2001, In : Microelectronic Engineering. 56, 3-4, p. 353-358 6 p.

Research output: Contribution to journalArticle

High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J., Jan 1 2001, IEEE International Reliability Physics Symposium Proceedings. Vol. 2001-January. p. 271-279 9 p. 922913

Research output: Chapter in Book/Report/Conference proceedingChapter

High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J., Jan 1 2001, In : Annual Proceedings - Reliability Physics (Symposium). p. 271-279 9 p.

Research output: Contribution to journalConference article

Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Hess, K. & Lyding, J. W., Mar 26 2001, In : Applied Physics Letters. 78, 13, p. 1882-1884 3 p.

Research output: Contribution to journalArticle

Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

Cheng, K., Hess, K. & Lyding, J. W., Dec 15 2001, In : Journal of Applied Physics. 90, 12, p. 6536-6538 3 p.

Research output: Contribution to journalArticle

Separation of hot-carrier-induced interface trap creation and oxide charge trapping in PMOSFETs studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Lyding, J. W., Kim, Y. K., Kim, Y. W. & Suh, K. P., Apr 1 2001, In : IEEE Electron Device Letters. 22, 4, p. 188-190 3 p.

Research output: Contribution to journalArticle

The physics of determining chip reliability

Hess, K., Haggag, A., McMahon, W., Cheng, K., Lee, J. & Lyding, J., May 1 2001, In : IEEE Circuits and Devices Magazine. 17, 3, p. 33-38 6 p.

Research output: Contribution to journalArticle

2000

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Jinju, L., Cheng, K., Chen, Z., Hess, K., Lyding, J. W., Young-Kwang, K., Seung, L., Young-Wug, K. & Kwang-Pyuk, S., May 1 2000, In : IEEE Electron Device Letters. 21, 5, p. 221-223 3 p.

Research output: Contribution to journalArticle

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Cheng, K., Lee, J. & Lyding, J. W., Oct 9 2000, In : Applied Physics Letters. 77, 15, p. 2358-2360 3 p.

Research output: Contribution to journalArticle

Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope

Foley, E. T., Kam, A. F. & Lyding, J. W., Sep 2000, In : Review of Scientific Instruments. 71, 9, p. 3428-3435 8 p.

Research output: Contribution to journalArticle

Experimental evidence of Si-H bond energy variation at SiO2-Si interface

Cheng, K., Lee, J. & Lyding, J. W., Nov 20 2000, In : Applied Physics Letters. 77, 21, p. 3388-3390 3 p.

Research output: Contribution to journalArticle

Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics

Hersam, M. C., Lee, J., Guisinger, N. P. & Lyding, J. W., May 2000, In : Superlattices and Microstructures. 27, 5, p. 583-591 9 p.

Research output: Contribution to journalConference article

Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications

Lee, J., Cheng, K., Lyding, J. W. & Salemink, H. W. M., Jan 1 2000, In : Materials Research Society Symposium-Proceedings. 609, p. A2681-A2686

Research output: Contribution to journalArticle

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

Probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: Models for deep-submicron transistors and optical interconnects

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J. W., Dec 1 2000, p. 179-182. 4 p.

Research output: Contribution to conferencePaper

Silicon-based molecular nanotechnology

Hersam, M. C., Guisinger, N. P. & Lyding, J. W., Jun 1 2000, In : Nanotechnology. 11, 2, p. 70-76 7 p.

Research output: Contribution to journalConference article

Simulation of Si-SiO2 defect generation in CMOS chips: From atomistic structure to chip failure rates

Hess, K., Haggag, A., McMahon, W., Fischer, B., Cheng, K., Lee, J. & Lyding, J. W., Dec 1 2000, In : Technical Digest - International Electron Devices Meeting. p. 93-95 3 p.

Research output: Contribution to journalConference article

1999

An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes?

Hess, K., Lee, J., Chen, Z., Lyding, J. W., Kim, Y. K., Kim, B. S., Lee, Y. H., Kim, Y. W. & Suh, K. P., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1914-1916 3 p.

Research output: Contribution to journalArticle

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Kim, Y. K., Lee, S. H., Lee, H. S., Kim, B. S., Lee, Y. H., Lee, J., Cheng, K., Chen, Z., Hess, K. & Lyding, J. W., Dec 1 1999, p. 65-68. 4 p.

Research output: Contribution to conferencePaper

Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

Hersam, M. C., Abeln, G. C. & Lyding, J. W., Jun 1999, In : Microelectronic Engineering. 47, 1, p. 235-237 3 p.

Research output: Contribution to journalConference article

Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

Tao, M. & Lyding, J. W., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 2020-2022 3 p.

Research output: Contribution to journalArticle

Effect of low temperature deuterium annealing on plasma process induced damage

Lee, S. H., Kim, Y. K., Lee, Y. H., Kang, H. S., Ahn, C. G., Kang, B. K., Lee, J., Cheng, K., Chen, Z., Hess, K. & Lyding, J. W., Dec 1 1999, p. 188-191. 4 p.

Research output: Contribution to conferencePaper

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I. & Chetlur, S., Dec 1 1999, In : Technical Digest - International Electron Devices Meeting. p. 85-88 4 p.

Research output: Contribution to journalConference article

The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors

Lee, J., Epstein, Y., Berti, A. C., Huber, J., Hess, K. & Lyding, J. W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 8, p. 1812-1813 2 p.

Research output: Contribution to journalArticle

Theory of channel hot-carrier degradation in MOSFETs

Hess, K., Register, L. F., McMahon, W., Tuttle, B., Aktas, O., Ravaioli, U., Lyding, J. W. & Kizilyalli, I. C., Dec 1 1999, In : Physica B: Condensed Matter. 272, 1-4, p. 527-531 5 p.

Research output: Contribution to journalConference article

1998

Alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface

Chen, Z., Lee, J. & Lyding, J. W., Jan 1 1998, In : Materials Research Society Symposium - Proceedings. 513, p. 313-317 5 p.

Research output: Contribution to journalConference article

Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)

Foley, E. T., Kam, A. F., Lyding, J. W. & Avouris, P., Jan 1 1998, In : Physical review letters. 80, 6, p. 1336-1339 4 p.

Research output: Contribution to journalArticle

Deuterium process of CMOS devices: New phenomena and dramatic improvement

Chen, Z., Lee, J., Lyding, J. W. & Hess, K., Jan 1 1998, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 180-181 2 p.

Research output: Contribution to journalConference article

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Hess, K., Kizilyalli, I. C. & Lyding, J. W., Dec 1 1998, In : IEEE Transactions on Electron Devices. 45, 2, p. 406-416 11 p.

Research output: Contribution to journalArticle

Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime

Hess, K., Register, L. F., Tuttle, B., Lyding, J. & Kizilyalli, I. C., Oct 16 1998, In : Physica E: Low-Dimensional Systems and Nanostructures. 3, 1-3, p. 1-7 7 p.

Research output: Contribution to journalArticle

Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems

Kizilyalli, I. C., Abeln, G. C., Chen, Z., Lee, J., Weber, G., Kotzias, B., Chetlur, S., Lyding, J. W. & Hess, K., Nov 1 1998, In : IEEE Electron Device Letters. 19, 11, p. 444-446 3 p.

Research output: Contribution to journalArticle

Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

Kizilyalli, I. C., Abeln, G., Chen, Z., Weber, G., Register, F., Harris, E., Chetlur, S., Higashi, G., Schofieled, M., Sen, S., Kotzias, B., Roy, P. K., Lyding, J. & Hess, K., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3506, p. 141-146 6 p.

Research output: Contribution to journalConference article

Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology

Lyding, J. W., Hess, K., Abeln, G. C., Thompson, D. S., Moore, J. S., Hersam, M. C., Foley, E. T., Lee, J., Chen, Z., Hwang, S. T., Choi, H., Avouris, P. & Kizilyalli, I. C., Jan 1 1998, In : Applied Surface Science. 130-132, p. 221-230 10 p.

Research output: Contribution to journalConference article

1997

Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

Kizilyalli, I. C., Lyding, J. W. & Hess, K., Mar 1 1997, In : IEEE Electron Device Letters. 18, 3, p. 81-83 3 p.

Research output: Contribution to journalArticle

Nanopatterning organic monolayers on Si(100) by selective chemisorption of norbornadiene

Abeln, G. C., Lee, S. Y., Lyding, J. W., Thompson, D. S. & Moore, J. S., May 19 1997, In : Applied Physics Letters. 70, 20, p. 2747-2749 3 p.

Research output: Contribution to journalArticle

UHV STM nanofabrication: Progress, technology spin-offs, and challenges

Lyding, J. W., Jan 1 1997, In : Proceedings of the IEEE. 85, 4, p. 589-600 12 p.

Research output: Contribution to journalArticle

1996

Breaking individual chemical bonds via STM-induced excitations

Avouris, P., Walkup, R. E., Rossi, A. R., Akpati, H. C., Nordlander, P., Shen, T. C., Abeln, G. C. & Lyding, J. W., Aug 1 1996, In : Surface Science. 363, 1-3, p. 368-377 10 p.

Research output: Contribution to journalArticle

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E. & Liu, H. C., Dec 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 203-208 6 p.

Research output: Contribution to journalConference article

Deuterium post metal annealing of MOSFETs for improved hot carrier reliability

Kizilyalli, I. C., Lyding, J. W. & Hess, K., Jan 1 1996, p. 14-15. 2 p.

Research output: Contribution to conferencePaper

EVAC: A virtual environment for control of remote imaging instrumentation

Potter, C., Brady, R., Moran, P., Gregory, C., Carragher, B., Kisseberth, N., Lyding, J. & Lindquist, J., Jul 1 1996, In : IEEE Computer Graphics and Applications. 16, 4, p. 62-66 5 p.

Research output: Contribution to journalArticle