Keyphrases
Annealing
21%
Atomic Resolution
15%
Atomic Scale
19%
Carbon Nanotubes
23%
Charge Density Wave
19%
Charge Transport
11%
Chemical Vapor Deposition
14%
Dangling Bonds
10%
Deep Submicron
13%
Desorption
16%
Deuterium
60%
Deuterium Isotope Effect
18%
Electrical Conductivity
10%
Electronic Devices
10%
GaAs(110)
10%
Glass Surface
14%
Graphene
32%
Graphene Nanoribbon
14%
H-surfaces
27%
Hot Carrier Reliability
18%
Hot Carriers
11%
Hot Electrons
12%
Hydrogen Desorption
20%
Interface Trap Generation
14%
Interface Traps
15%
Isotope Effect
17%
Microscopic Study
11%
MOSFET
14%
Multi-walled Carbon Nanotubes (MWCNTs)
33%
Nanofabrication
12%
Nanometer Scale
12%
Nanotubes
13%
NbSe3
11%
Oxides
13%
Passivated
28%
Passivation
17%
Quantum Dots
11%
Room Temperature
18%
Scanning Tunneling Microscope
74%
Scanning Tunneling Microscopy
100%
Scanning Tunneling Spectroscopy
23%
Si(100) Surface
30%
Si(111)
66%
Silicon Surface
17%
Single Molecule
13%
Transistor
19%
Tunneling
10%
Two-state
10%
Ultra-high Vacuum
57%
Variable Temperature
12%
Material Science
Activation Energy
7%
Amorphous Material
7%
Amorphous Metal
6%
Annealing
16%
Carbon Nanotube
58%
Chemical Vapor Deposition
16%
Complementary Metal-Oxide-Semiconductor Device
7%
Conductor
6%
Crystal Structure
5%
Crystalline Material
8%
Density
35%
Desorption
41%
Deuterium
66%
Dielectric Material
9%
Doping (Additives)
12%
Electrical Conductivity
16%
Electrochemical Cell
6%
Electronic Circuit
6%
Electronic Property
11%
Electronic Structure
7%
Epitaxy
5%
Film
12%
Gallium Arsenide
13%
Grain Boundary
7%
Graphene
62%
Hot Carrier
30%
Hot Electron
16%
Indium Gallium Arsenide
6%
Laminar Flows
6%
Linewidth
11%
Lithography
18%
Metal Oxide
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Monolayers
19%
Nanocrystalline Material
16%
Nanoribbon
15%
Nanotube
9%
Nanowire
6%
Negative-Bias Temperature Instability
9%
Optical Property
5%
Oxidant
6%
Oxidation Reaction
16%
Oxide Compound
23%
Oxide Semiconductor
12%
Quantum Dot
10%
Semiconductor Device
14%
Silicon
58%
Sintering
6%
Thin Films
7%
Transistor
24%
Engineering
Activation Energy
6%
Annealing Time
6%
Carbon Nanotube
29%
Charge Density
10%
Chemical Vapor Deposition
5%
Complementary Metal-Oxide-Semiconductor
5%
Dangling Bond
12%
Defects
21%
Depassivation
7%
Dielectrics
14%
Electron Degradation
6%
Energy Engineering
13%
Gallium Arsenide
10%
Gate Oxide
6%
Glass Surface
10%
Graphene
20%
Hot Electron
20%
Indium Gallium Arsenide
9%
Integrated Circuit
6%
Interface Electronics
6%
Interface Trap
30%
Laminar Flows
6%
Lithography
11%
Metal Oxide Semiconductor
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
21%
Nanometre
21%
Nanoscale
18%
Nanotube
9%
Nanowires
6%
Negative-Bias Temperature Instability
9%
Nitride
6%
Optical Interconnect
6%
Passivation
20%
Room Temperature
8%
Scanning Tunneling Microscope
52%
Scanning Tunneling Microscopy
69%
Semiconductor Device
8%
Si Interface
9%
Silicon Oxide
6%
Silicon Surface
8%
Single-Walled Carbon Nanotube
20%
Sintering Process
5%
Statistical Model
6%
Tunnel Construction
20%
Vapor Deposition
5%
