Keyphrases
Scanning Tunneling Microscopy
83%
Scanning Tunneling Microscope
62%
Si(111)
55%
Deuterium
50%
Ultra-high Vacuum
48%
Multi-walled Carbon Nanotubes (MWCNTs)
27%
Graphene
26%
Si(100) Surface
25%
Passivated
24%
H-surfaces
22%
Scanning Tunneling Spectroscopy
19%
Carbon Nanotubes
19%
Annealing
18%
Hydrogen Desorption
17%
Transistor
16%
Charge Density Wave
16%
Atomic Scale
16%
Room Temperature
15%
Hot Carrier Reliability
15%
Deuterium Isotope Effect
15%
Isotope Effect
14%
Passivation
14%
Silicon Surface
14%
Desorption
14%
Graphene Nanoribbon
13%
Interface Traps
12%
Atomic Resolution
12%
MOSFET
12%
Chemical Vapor Deposition
12%
Interface Trap Generation
11%
Glass Surface
11%
Single Molecule
11%
Nanotubes
11%
Oxides
11%
Deep Submicron
11%
Variable Temperature
10%
Hot Electrons
10%
Nanofabrication
10%
Nanometer Scale
10%
Hot Carriers
10%
Charge Transport
9%
Microscopic Study
9%
Quantum Dots
9%
NbSe3
9%
Dangling Bonds
8%
GaAs(110)
8%
Two-state
8%
Electrical Conductivity
8%
Electronic Devices
8%
Tunneling
8%
Material Science
Scanning Tunneling Microscopy
100%
Surface (Surface Science)
96%
Deuterium
55%
Graphene
53%
Carbon Nanotube
47%
Silicon
44%
Desorption
28%
Density
26%
Hot Carrier
25%
Transistor
20%
Oxide Compound
19%
Nanoribbon
15%
Metal Oxide
14%
Electrical Conductivity
13%
Hot Electron
13%
Chemical Vapor Deposition
13%
Monolayers
13%
Metal-Oxide-Semiconductor Field-Effect Transistor
12%
Semiconductor Device
12%
Lithography
12%
Oxide Semiconductor
10%
Doping (Additives)
10%
Annealing
10%
Gallium Arsenide
10%
Nanostructure
9%
Quantum Dot
8%
Film
8%
Nanotube
7%
Electronic Property
7%
Negative-Bias Temperature Instability
7%
Activation Energy
6%
Dielectric Material
6%
Linewidth
6%
Complementary Metal-Oxide-Semiconductor Device
6%
Nanowire
6%
Grain Boundary
6%
Conductor
5%
Laminar Flows
5%
Amorphous Metal
5%
Oxidant
5%
Electrochemical Cell
5%
Interface Electronics
5%
Indium Gallium Arsenide
5%
Thin Films
5%
Sintering
5%
Engineering
Scanning Tunneling Microscopy
56%
Scanning Tunneling Microscope
40%
Interface Trap
25%
Carbon Nanotube
22%
Silicon Dioxide
19%
Nanometre
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
18%
Graphene
17%
Passivation
17%
Hot Electron
17%
Single-Walled Carbon Nanotube
15%
Nanoscale
15%
Tunnel Construction
14%
Dielectrics
10%
Metal Oxide Semiconductor
9%
Gallium Arsenide
8%
Charge Density
8%
Lithography
8%
Nanotube
8%
Dangling Bond
8%
Glass Surface
8%
Si Interface
7%
Negative-Bias Temperature Instability
7%
Indium Gallium Arsenide
7%
Semiconductor Device
7%
Depassivation
6%
Nanowire
6%
Laminar Flows
5%
Nitride
5%
Interface Electronics
5%
Gate Oxide
5%
Optical Interconnect
5%
Annealing Time
5%
Failure Time
5%
Silicon Oxide
5%
Activation Energy
5%
Nanomaterial
5%
Electron Degradation
5%
Integrated Circuit
5%
Band Gap
5%
