Material Science
Amorphous Material
35%
Amorphous Silicon
58%
Annealing
11%
Chemical Vapor Deposition
55%
Crystalline Material
12%
Defect Density
7%
Density
16%
Desorption
7%
Dielectric Material
5%
Electrical Resistivity
5%
Electron Microscopy
10%
Electronic Property
5%
Film
100%
Film Growth
15%
Hafnium
17%
Magnetron Sputtering
30%
Medium-Range Order
9%
Molecular Beam Epitaxy
6%
Nitride Compound
5%
Nucleation
22%
Oxide Compound
7%
Phase Change Material
6%
Silicon
23%
Sputter Deposition
10%
Thin Films
49%
Thin-Film Transistor
6%
Transmission Electron Microscopy
9%
Keyphrases
A-Si
33%
Ammonia
10%
Amorphous Silicon
21%
Amorphous Silicon Thin Film
6%
Annealing
11%
As-deposited
5%
Aspect Ratio
7%
Atomic Hydrogen
7%
C-Si
10%
Chemical Vapor Deposition
37%
Cm(III)
7%
Coflow
5%
Coreactant
5%
Defect Density
6%
Electronic Properties
5%
Ellipsometry
5%
Film Growth
14%
Fluctuation Electron Microscopy
10%
Gas Source Molecular Beam Epitaxy
5%
Ge2Sb2Te5
8%
Growth Areas
6%
Growth Inhibitor
6%
Growth Rate
14%
Hafnium Diboride
13%
HfB2
20%
Hydrogen Content
7%
Hydrogenated Amorphous Silicon
25%
In Situ
6%
Infrared Absorption
6%
Infrared Reflectance Spectroscopy
5%
Low Temperature
12%
Low Temperature Chemical Vapor Deposition
9%
Magnetron Sputtering
8%
Magnetron Sputtering Deposition
11%
Medium-range Order
9%
Microcrystalline
5%
Microstructure
9%
Phase Change Material
6%
Reactive Magnetron Sputtering
18%
Real-time Infrared
7%
Si(111)
11%
Silica
6%
Single-source Precursor
6%
Spectroscopic Ellipsometry
6%
Substrate Temperature
16%
Superconformal
7%
Thin-film Transistors
5%
Transmission Electron Microscopy
6%
Engineering
Adsorption
5%
Aspect Ratio
8%
Chemical Vapor Deposition
36%
Deposited Film
5%
Energy Engineering
5%
Growth Surface
5%
Hydrogenated Amorphous Silicon
16%
Low-Temperature
17%
Magnetron
16%
Microstructure
5%
Nanoscale
7%
Single Source
5%
Substrate Temperature
12%
Thin Films
22%
Thin-Film Transistor
5%
Vapor Deposition
31%
