Engineering & Materials Science
Chemical vapor deposition
100%
Amorphous silicon
78%
Thin films
61%
Magnetron sputtering
47%
Reactive sputtering
45%
Hafnium
41%
Substrates
40%
Hydrogen
33%
Film growth
32%
Temperature
27%
Fluxes
20%
Nucleation
18%
Crystalline materials
18%
Electron microscopy
17%
Spectroscopic ellipsometry
17%
Silicon
15%
Spectroscopy
15%
Ions
14%
Sputter deposition
13%
Plasmas
12%
Thin film transistors
11%
Defect density
11%
Nitrides
11%
Microstructure
11%
Oxides
10%
Gas source molecular beam epitaxy
10%
Ion bombardment
9%
X rays
9%
Growth temperature
9%
Aspect ratio
9%
Atoms
8%
Desorption
8%
Hot Temperature
7%
Infrared spectroscopy
7%
Metals
7%
Dangling bonds
7%
Carbon
7%
Deuterium
7%
Molecules
7%
Microcrystalline silicon
7%
Growth kinetics
7%
Surface roughness
6%
Cobalt
6%
Physics & Astronomy
amorphous silicon
84%
vapor deposition
64%
thin films
43%
magnetron sputtering
38%
hydrogen
38%
nucleation
27%
hafnium
26%
ellipsometry
24%
silicon films
21%
silicon
19%
kinetics
17%
temperature
15%
electron microscopy
14%
ammonia
14%
inhibitors
14%
ions
13%
phase change materials
13%
desorption
12%
bombardment
11%
transmission electron microscopy
11%
microstructure
10%
infrared absorption
10%
infrared spectroscopy
10%
coatings
10%
annealing
9%
crystallization
9%
electronics
9%
partial pressure
8%
molecular beam epitaxy
8%
nuclei
8%
amorphous materials
8%
defects
8%
direct current
7%
spectroscopy
7%
surface reactions
7%
energy
7%
gases
7%
roughness
7%
nitrogen
7%
oxides
6%
reflectance
6%
silanes
6%
aspect ratio
6%
methylidyne
6%
carbon
6%
deposits
6%
deuterium
6%
profiles
6%
transistors
5%
probes
5%
Chemical Compounds
Liquid Film
67%
Amorphous Silicon
64%
Chemical Vapour Deposition
63%
Magnetron Sputtering
38%
Hafnium Atom
29%
Amorphous Material
21%
Hydrogen
18%
Surface
18%
Ellipsometry
18%
Nucleation
15%
Growth Inhibitor
12%
Ammonia
11%
Sputter Deposition
11%
Pressure
11%
Electron Microscopy
10%
Microstructure
9%
Partial Pressure
8%
Nitride
8%
Plasma
8%
Ion Bombardment
7%
Annealing
7%
Oxide
6%
Growth Inhibition
6%
Polycrystalline Solid
6%
Microcrystallinity
6%
Molecular Beam Epitaxy
5%
Dangling Bond
5%
Metal
5%
Staebler-Wronski Effect
5%
Microcrystallites
5%
Etching
5%
Carbon Atom
5%
Ion
5%
Alloy
5%