Material Science
Film
100%
Amorphous Silicon
58%
Chemical Vapor Deposition
55%
Thin Films
49%
Surface (Surface Science)
44%
Magnetron Sputtering
30%
Nucleation
23%
Silicon
23%
Hafnium
18%
Density
15%
Film Growth
14%
Electron Microscopy
11%
Annealing
11%
Transmission Electron Microscopy
11%
Sputter Deposition
10%
Medium-Range Order
9%
Oxide Compound
8%
Defect Density
7%
Molecular Beam Epitaxy
7%
Desorption
6%
Phase Change Material
6%
Thin-Film Transistor
6%
Electrical Resistivity
5%
Nitride Compound
5%
Dielectric Material
5%
Electronic Property
5%
Keyphrases
Chemical Vapor Deposition
38%
A-Si
33%
Hydrogenated Amorphous Silicon
25%
Amorphous Silicon
22%
HfB2
21%
Reactive Magnetron Sputtering
18%
Substrate Temperature
16%
Growth Rate
14%
Film Growth
14%
Hafnium Diboride
13%
Low Temperature
12%
Magnetron Sputtering Deposition
11%
Si(111)
11%
Annealing
11%
Fluctuation Electron Microscopy
10%
C-Si
10%
Ammonia
10%
Low Temperature Chemical Vapor Deposition
10%
Medium-range Order
9%
Microstructure
9%
Ge2Sb2Te5
8%
Magnetron Sputtering
8%
Superconformal
8%
Aspect Ratio
7%
Hydrogen Content
7%
Real-time Infrared
7%
Cm(III)
7%
Atomic Hydrogen
7%
Transmission Electron Microscopy
6%
Silica
6%
Phase Change Material
6%
Infrared Absorption
6%
Spectroscopic Ellipsometry
6%
Growth Inhibitor
6%
Amorphous Silicon Thin Film
6%
Single-source Precursor
6%
Growth Areas
6%
Defect Density
6%
In Situ
6%
Coflow
5%
Ellipsometry
5%
Gas Source Molecular Beam Epitaxy
5%
Microcrystalline
5%
Thin-film Transistors
5%
Infrared Reflectance Spectroscopy
5%
As-deposited
5%
Coreactant
5%
Electronic Properties
5%
Hydrogenated Amorphous Silicon Films
5%
Crystallization
5%
Engineering
Chemical Vapor Deposition
36%
Vapor Deposition
31%
Thin Films
22%
Low-Temperature
17%
Hydrogenated Amorphous Silicon
16%
Magnetron
16%
Substrate Temperature
12%
Aspect Ratio
8%
Nanoscale
8%
Single Source
6%
Deposited Film
5%
Thin-Film Transistor
5%
Growth Surface
5%
