1989 …2019
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Research Output 1989 2019

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1999

EOS/ESD reliability of partially depleted SOI technology

Raha, P., Diaz, C., Rosenbaum, E., Cao, M., Vandevoorde, P. & Greene, W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 2, p. 429-431 3 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Diodes
Simulators
Networks (circuits)
1998

ESD robustness prediction and protection device design in partially depleted SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Jan 1 1998, In : Microelectronics Reliability. 38, 11, p. 1723-1731 9 p.

Research output: Contribution to journalArticle

Silicon on insulator technology
Silicon
insulators
silicon
predictions

ILLIADS-T: An electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips

Cheng, Y. K., Raha, P., Teng, C. C., Rosenbaum, E. & Kang, S. M., Dec 1 1998, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17, 8, p. 668-681 14 p.

Research output: Contribution to journalArticle

VLSI circuits
Simulators
Packaging
Specifications
Temperature
CMOS
electrostatics
simulation
layouts
silicon
1997

Heat flow analysis for EOS/ESD protection device design in SOI technology

Raha, P., Ramaswamy, S. & Rosenbaum, E., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 3, p. 464-471 8 p.

Research output: Contribution to journalArticle

Heat transfer
Joule heating
Electric lines
Heating
Hot Temperature

ITEM: A temperature-dependent electromigration reliability diagnosis tool

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Dec 1 1997, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16, 8, p. 882-893 12 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction

Mechanism of stress-induced leakage current in MOS capacitors

Rosenbaum, E. & Register, L. F., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 2, p. 317-323 7 p.

Research output: Contribution to journalArticle

MOS capacitors
Leakage currents
Electric potential
Field emission
Oxides

Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Dec 1 1997, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 356-365 10 p.

Research output: Contribution to journalArticle

SOI (semiconductors)
thin films
predictions
field effect transistors
film thickness

Time-dependent snapback in thin-film SOI MOSFET's

Raha, P., Miller, J. W. & Rosenbaum, E., Nov 1 1997, In : IEEE Electron Device Letters. 18, 11, p. 509-511 3 p.

Research output: Contribution to journalArticle

Bipolar transistors
Thin films
Electric potential
1996

Accelerated testing of SiC>2 reliability

Rosenbaum, E., King, J. C. & Hu, C., Dec 1 1996, In : IEEE Transactions on Electron Devices. 43, 1, p. 70-80 11 p.

Research output: Contribution to journalArticle

Electric breakdown
Defects
Testing
Charge trapping
Oxides

Chip-level electrothermal simulator for temperature profile estimation of CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 580-583 4 p.

Research output: Contribution to journalArticle

Simulators
Packaging
Temperature
Networks (circuits)

iCET: A complete chip-level thermal reliability diagnosis tool for CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - Design Automation Conference. p. 548-551 4 p.

Research output: Contribution to journalArticle

Packaging materials
Networks (circuits)
Transistors
Simulators
Boundary conditions

iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., 1996, In : Annual Proceedings - Reliability Physics (Symposium). p. 172-179 8 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction
1995

Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits

Rosenbaum, E. & Hu, C., Aug 1995, In : IEEE Transactions on Semiconductor Manufacturing. 8, 3, p. 370-374 5 p.

Research output: Contribution to journalArticle

Digital circuits
Oxides
CMOS
digital electronics
Simulators

Relation between oxide degradation and oxide breakdown

Felsch, C. & Rosenbaum, E., 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 142-148 7 p.

Research output: Contribution to journalArticle

Degradation
Oxides
Electron traps
Charge trapping
1993

A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Quader, K. N., Li, C. C., Tu, R., Rosenbaum, E., Ko, P. K. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2245-2254 10 p.

Research output: Contribution to journalArticle

Hot carriers
Drain current
Degradation
Networks (circuits)
Parameter extraction

Berkeley Reliability Tools-BERT

Tu, R. H., Rosenbaum, E., Chan, W. Y., Li, C. C., Minami, E., Quader, K., Keung Ko, P. & Hu, C., Oct 1993, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12, 10, p. 1524-1534 11 p.

Research output: Contribution to journalArticle

Networks (circuits)
SPICE
Simulators
Degradation
Electromigration

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Rosenbaum, E., Liu, Z. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2287-2295 9 p.

Research output: Contribution to journalArticle

Silicon Dioxide
hole distribution
Oxides
breakdown
Silica
1991

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Rosenbaum, E., Rofan, R. & Hu, C., Nov 1991, In : IEEE Electron Device Letters. 12, 11, p. 599-601 3 p.

Research output: Contribution to journalArticle

Hot carriers
Oxides
Charge injection
Drain current
Electrons

High-Frequency Time-Dependent Breakdown of SiO2

Rosenbaum, E. & Hu, C., Jun 1991, In : IEEE Electron Device Letters. 12, 6, p. 267-269 3 p.

Research output: Contribution to journalArticle

Electric breakdown
Oxides
1989

Circuit reliability simulator--Oxide breakdown module

Rosenbaum, E., Lee, P. M., Moazzami, R., Ko, P. K. & Hu, C., 1989, In : Technical Digest - International Electron Devices Meeting. p. 331-334 4 p.

Research output: Contribution to journalArticle

circuit reliability
Oxides
simulators
modules
Simulators