1989 …2019
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Research Output 1989 2019

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A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Quader, K. N., Li, C. C., Tu, R., Rosenbaum, E., Ko, P. K. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2245-2254 10 p.

Research output: Contribution to journalArticle

Hot carriers
Drain current
Degradation
Networks (circuits)
Parameter extraction

Accelerated testing of SiC>2 reliability

Rosenbaum, E., King, J. C. & Hu, C., Dec 1 1996, In : IEEE Transactions on Electron Devices. 43, 1, p. 70-80 11 p.

Research output: Contribution to journalArticle

Electric breakdown
Defects
Testing
Charge trapping
Oxides
Level measurement
Electrostatic discharge
Electric lines

A compact, ESD-protected, SiGe BiCMOS LNA for ultra-wideband applications

Bhatia, K., Hyvonen, S. & Rosenbaum, E., May 1 2007, In : IEEE Journal of Solid-State Circuits. 42, 5, p. 1121-1130 10 p.

Research output: Contribution to journalArticle

Low noise amplifiers
Ultra-wideband (UWB)
Noise figure
Broadband amplifiers
Heterojunction bipolar transistors
Logic gates

Analysis of active-clamp response to power-on ESD: Power supply integrity and performance tradeoffs

Mertens, R., Thomson, N., Xiu, Y. & Rosenbaum, E., Sep 1 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 263-271 9 p., 7177068.

Research output: Contribution to journalArticle

Clamping devices
Rails
Networks (circuits)
Transient analysis

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Register, L. F., Rosenbaum, E. & Yang, K., Jan 18 1999, In : Applied Physics Letters. 74, 3, p. 457-459 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
Wentzel-Kramer-Brillouin method
silicon
electron impact

An automated and efficient substrate noise analysis tool

Li, H., Zemke, C. E., Manetas, G., Okhmatovski, V. I. & Rosenbaum, E., Mar 1 2006, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 25, 3, p. 454-468 15 p.

Research output: Contribution to journalArticle

Circuit simulation
Substrates
Boundary element method
Green's function
Electric potential
Resonators

A new compact model for external latchup

Farbiz, F. & Rosenbaum, E., Dec 1 2009, In : Microelectronics Reliability. 49, 12, p. 1447-1454 8 p.

Research output: Contribution to journalArticle

layouts
CMOS
spacing
Electric potential
electric potential

Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.

Research output: Contribution to journalArticle

Deuterium
Anodes
Hydrogen
Oxides
Metallizing

A scalable SCR compact model for ESD circuit simulation

Di Sarro, J. P. & Rosenbaum, E., Dec 1 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3275-3286 12 p., 5610716.

Research output: Contribution to journalArticle

Electrostatic discharge
Circuit simulation
Thyristors
Electric potential
Heating

A Study of BER-Optimal ADC-Based Receiver for Serial Links

Lin, Y., Keel, M. S., Faust, A., Xu, A., Shanbhag, N. R., Rosenbaum, E. & Singer, A. C., May 2016, In : IEEE Transactions on Circuits and Systems I: Regular Papers. 63, 5, p. 693-704 12 p., 7486052.

Research output: Contribution to journalArticle

Digital to analog conversion
Bit error rate
Energy dissipation
Throughput

Berkeley Reliability Tools-BERT

Tu, R. H., Rosenbaum, E., Chan, W. Y., Li, C. C., Minami, E., Quader, K., Keung Ko, P. & Hu, C., Oct 1993, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12, 10, p. 1524-1534 11 p.

Research output: Contribution to journalArticle

Networks (circuits)
SPICE
Simulators
Degradation
Electromigration

Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Wu, J., Juliano, P. & Rosenbaum, E., Nov 1 2001, In : Microelectronics Reliability. 41, 11, p. 1771-1779 9 p.

Research output: Contribution to journalArticle

Oxides
breakdown
damage
oxides
Electric potential

Cancellation technique to provide ESD protection for multi-GHz RF inputs

Hyvonen, S., Joshi, S. & Rosenbaum, E., Feb 6 2003, In : Electronics Letters. 39, 3, p. 284-286 3 p.

Research output: Contribution to journalArticle

CDM-reliable T-coil techniques for a 25-Gb/s wireline receiver front-end

Keel, M. S. & Rosenbaum, E., Dec 2016, In : IEEE Transactions on Device and Materials Reliability. 16, 4, p. 513-520 8 p., 7523221.

Research output: Contribution to journalArticle

Electrostatic discharge
Magnetic couplings
Inductance
Networks (circuits)
Equalizers

Charged Device Model Reliability of Three-Dimensional Integrated Circuits

Shukla, V. & Rosenbaum, E., Dec 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 4, p. 559-566 8 p., 7299296.

Research output: Contribution to journalArticle

Clamping devices
Circuit simulation
Silicon
Electric power distribution
Integrated circuits

Chip-level electrothermal simulator for temperature profile estimation of CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 580-583 4 p.

Research output: Contribution to journalArticle

Simulators
Packaging
Temperature
Networks (circuits)

Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits

Rosenbaum, E. & Hu, C., Aug 1995, In : IEEE Transactions on Semiconductor Manufacturing. 8, 3, p. 370-374 5 p.

Research output: Contribution to journalArticle

Digital circuits
Oxides
CMOS
digital electronics
Simulators

Circuit reliability simulator--Oxide breakdown module

Rosenbaum, E., Lee, P. M., Moazzami, R., Ko, P. K. & Hu, C., 1989, In : Technical Digest - International Electron Devices Meeting. p. 331-334 4 p.

Research output: Contribution to journalArticle

circuit reliability
Oxides
simulators
modules
Simulators

Combined TLP/RF testing system for detection of ESD failures in RF circuits

Hyvonen, S., Joshi, S. & Rosenbaum, E., Jul 1 2005, In : IEEE Transactions on Electronics Packaging Manufacturing. 28, 3, p. 224-230 7 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Leakage currents
Electric lines
Electric current measurement
Networks (circuits)

Compact distributed multi-finger MOSFET model for circuit-level ESD simulation

Meng, K. H., Chen, Z. & Rosenbaum, E., Aug 1 2016, In : Microelectronics Reliability. 63, p. 11-21 11 p.

Research output: Contribution to journalArticle

field effect transistors
Networks (circuits)
simulation
Heating
Parameter extraction

Compact modeling of on-chip ESD protection devices using Verilog-A

Li, J., Joshi, S., Barnes, R. & Rosenbaum, E., Jun 1 2006, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 25, 6, p. 1047-1063 17 p.

Research output: Contribution to journalArticle

Computer hardware description languages
Electrostatic discharge
Transistors
Resistors
Diodes

Comparison of FICDM and wafer-level CDM test methods

Jack, N. & Rosenbaum, E., Jul 1 2013, In : IEEE Transactions on Device and Materials Reliability. 13, 2, p. 379-387 9 p., 6515361.

Research output: Contribution to journalArticle

Integrated circuits
Induced currents
Electric lines
Networks (circuits)
Electric potential

Comparison of wafer-level with package-level CDM stress facilitated by real-time probing

Jack, N., Shukla, V. & Rosenbaum, E., Dec 1 2011, In : IEEE Transactions on Device and Materials Reliability. 11, 4, p. 522-530 9 p., 6006519.

Research output: Contribution to journalArticle

Electrostatic discharge
Circuit simulation
Induced currents
Electric potential

Comprehensive ESD protection for RF inputs

Hyvonen, S., Joshi, S. & Rosenbaum, E., Feb 1 2005, In : Microelectronics Reliability. 45, 2, p. 245-254 10 p.

Research output: Contribution to journalArticle

Networks (circuits)
circuit protection
human body
figure of merit
narrowband

Comprehensive frequency-dependent substrate noise analysis using boundary element methods

Li, H., Carballido, J., Yu, H. H., Okhmatovski, V. I., Rosenbaum, E. & Cangellaris, A. C., Jan 1 2002, In : IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers. p. 2-9 8 p.

Research output: Contribution to journalArticle

Boundary element method
Substrates
Electrodynamics
Green's function
Doping (additives)

Comprehensive study of drain breakdown in MOSFETs

Li, J., Li, H., Barnes, R. & Rosenbaum, E., Jun 1 2005, In : IEEE Transactions on Electron Devices. 52, 6, p. 1180-1186 7 p.

Research output: Contribution to journalArticle

Electric breakdown
Electric potential
Substrates

Critical evaluation of SOI design guidelines

Kanj, R. & Rosenbaum, E., Sep 1 2004, In : IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 12, 9, p. 885-894 10 p.

Research output: Contribution to journalArticle

Silicon
Silicon on insulator technology
Logic design
Networks (circuits)
Adders

Design and optimization of vertical SiGe thyristors for on-chip BSD protection

Joshi, S., Ida, R. & Rosenbaum, E., Dec 1 2004, In : IEEE Transactions on Device and Materials Reliability. 4, 4, p. 586-593 8 p.

Research output: Contribution to journalArticle

Thyristors
Integrated circuits
Anodes
Geometry
Experiments

Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

Chen, W. Y., Rosenbaum, E. & Ker, M. D., Mar 1 2012, In : IEEE Transactions on Device and Materials Reliability. 12, 1, p. 10-14 5 p., 6163575.

Research output: Contribution to journalArticle

Thyristors
Diodes
Electric potential
Electrostatic discharge
Leakage currents

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Rosenbaum, E., Rofan, R. & Hu, C., Nov 1991, In : IEEE Electron Device Letters. 12, 11, p. 599-601 3 p.

Research output: Contribution to journalArticle

Hot carriers
Oxides
Charge injection
Drain current
Electrons

Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Voldman, S., Juliano, P., Johnson, R., Schmidt, N., Joseph, A., Furkay, S., Rosenbaum, E., Dunn, J., Harame, D. & Meyerson, B., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 310-316 7 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Heterojunction bipolar transistors
Germanium
Silicon
Failure analysis

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Wang, Y., Juliano, P., Joshi, S. & Rosenbaum, E., Nov 1 2001, In : Microelectronics Reliability. 41, 11, p. 1781-1787 7 p.

Research output: Contribution to journalArticle

circuit protection
SOI (semiconductors)
Diodes
diodes
Networks (circuits)

EOS/ESD reliability of partially depleted SOI technology

Raha, P., Diaz, C., Rosenbaum, E., Cao, M., Vandevoorde, P. & Greene, W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 2, p. 429-431 3 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Diodes
Simulators
Networks (circuits)

ESD protection for broadband ICs (DC-20 GHz and beyond)

Joshi, S. & Rosenbaum, E., Jun 12 2003, In : Electronics Letters. 39, 12, p. 906-908 3 p.

Research output: Contribution to journalArticle

Microwave filters
Cutoff frequency
Networks (circuits)

ESD robustness prediction and protection device design in partially depleted SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Jan 1 1998, In : Microelectronics Reliability. 38, 11, p. 1723-1731 9 p.

Research output: Contribution to journalArticle

Silicon on insulator technology
Silicon
insulators
silicon
predictions

ESD self-protection of high-speed transceivers using adaptive active bias conditioning

Keel, M. S. & Rosenbaum, E., Mar 2017, In : IEEE Transactions on Device and Materials Reliability. 17, 1, p. 113-120 8 p., 7744493.

Research output: Contribution to journalArticle

Electrostatic discharge
Transceivers
Failure analysis
Electric lines
Transistors

Full-component modeling and simulation of charged device model ESD

Meng, K. H., Shukla, V. & Rosenbaum, E., Jul 2016, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 35, 7, p. 1105-1113 9 p., 7308012.

Research output: Contribution to journalArticle

Electrostatic discharge
Circuit simulation
Equivalent circuits
Integrated circuits
Networks (circuits)

Gate oxide reliability under ESD-like pulse stress

Wu, J. & Rosenbaum, E., Jul 1 2004, In : IEEE Transactions on Electron Devices. 51, 7, p. 1192-1196 5 p.

Research output: Contribution to journalArticle

Oxides
Electrostatic discharge
Electric breakdown
Heating

Gate oxide reliability under ESD-like pulse stress

Wu, J. & Rosenbaum, E., Sep 1 2004, In : IEEE Transactions on Electron Devices. 51, 9, p. 1528-1532 5 p.

Research output: Contribution to journalArticle

Oxides
Electrostatic discharge
Electric breakdown
Heating

Heat flow analysis for EOS/ESD protection device design in SOI technology

Raha, P., Ramaswamy, S. & Rosenbaum, E., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 3, p. 464-471 8 p.

Research output: Contribution to journalArticle

Heat transfer
Joule heating
Electric lines
Heating
Hot Temperature

High-Frequency Time-Dependent Breakdown of SiO2

Rosenbaum, E. & Hu, C., Jun 1991, In : IEEE Electron Device Letters. 12, 6, p. 267-269 3 p.

Research output: Contribution to journalArticle

Electric breakdown
Oxides

High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Joshi, S., Hyvonen, S. & Rosenbaum, E., Jul 1 2005, In : IEEE Transactions on Electron Devices. 52, 7, p. 1484-1488 5 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Capacitance
Trigger circuits
Matched filters
Resonators

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

Li, E., Rosenbaum, E., Register, L. F., Tao, J. & Fang, P., 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 103-107 5 p.

Research output: Contribution to journalArticle

Hot carriers
Degradation
Networks (circuits)
Testing
Temperature

iCET: A complete chip-level thermal reliability diagnosis tool for CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - Design Automation Conference. p. 548-551 4 p.

Research output: Contribution to journalArticle

Packaging materials
Networks (circuits)
Transistors
Simulators
Boundary conditions

ILLIADS-T: An electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips

Cheng, Y. K., Raha, P., Teng, C. C., Rosenbaum, E. & Kang, S. M., Dec 1 1998, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17, 8, p. 668-681 14 p.

Research output: Contribution to journalArticle

VLSI circuits
Simulators
Packaging
Specifications
Temperature

Interconnect thermal modeling for accurate simulation of circuit timing and reliability

Chen, D., Li, E., Rosenbaum, E. & Kang, S. M., Jan 1 2000, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 19, 2, p. 197-205 9 p.

Research output: Contribution to journalArticle

Timing circuits
Geometry
Temperature
Computer aided design
Current density

iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., 1996, In : Annual Proceedings - Reliability Physics (Symposium). p. 172-179 8 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction