1989 …2019
If you made any changes in Pure, your changes will be visible here soon.

Research Output 1989 2019

Filter
Article
1989

Circuit reliability simulator--Oxide breakdown module

Rosenbaum, E., Lee, P. M., Moazzami, R., Ko, P. K. & Hu, C., 1989, In : Technical Digest - International Electron Devices Meeting. p. 331-334 4 p.

Research output: Contribution to journalArticle

circuit reliability
Oxides
simulators
modules
Simulators
1991

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Rosenbaum, E., Rofan, R. & Hu, C., Nov 1991, In : IEEE Electron Device Letters. 12, 11, p. 599-601 3 p.

Research output: Contribution to journalArticle

Hot carriers
Oxides
Charge injection
Drain current
Electrons

High-Frequency Time-Dependent Breakdown of SiO2

Rosenbaum, E. & Hu, C., Jun 1991, In : IEEE Electron Device Letters. 12, 6, p. 267-269 3 p.

Research output: Contribution to journalArticle

Electric breakdown
Oxides
1993

A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Quader, K. N., Li, C. C., Tu, R., Rosenbaum, E., Ko, P. K. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2245-2254 10 p.

Research output: Contribution to journalArticle

Hot carriers
Drain current
Degradation
Networks (circuits)
Parameter extraction

Berkeley Reliability Tools-BERT

Tu, R. H., Rosenbaum, E., Chan, W. Y., Li, C. C., Minami, E., Quader, K., Keung Ko, P. & Hu, C., Oct 1993, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12, 10, p. 1524-1534 11 p.

Research output: Contribution to journalArticle

Networks (circuits)
SPICE
Simulators
Degradation
Electromigration

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Rosenbaum, E., Liu, Z. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2287-2295 9 p.

Research output: Contribution to journalArticle

Silicon Dioxide
hole distribution
Oxides
breakdown
Silica
1995

Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits

Rosenbaum, E. & Hu, C., Aug 1995, In : IEEE Transactions on Semiconductor Manufacturing. 8, 3, p. 370-374 5 p.

Research output: Contribution to journalArticle

Digital circuits
Oxides
CMOS
digital electronics
Simulators

Relation between oxide degradation and oxide breakdown

Felsch, C. & Rosenbaum, E., 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 142-148 7 p.

Research output: Contribution to journalArticle

Degradation
Oxides
Electron traps
Charge trapping
1996

Accelerated testing of SiC>2 reliability

Rosenbaum, E., King, J. C. & Hu, C., Dec 1 1996, In : IEEE Transactions on Electron Devices. 43, 1, p. 70-80 11 p.

Research output: Contribution to journalArticle

Electric breakdown
Defects
Testing
Charge trapping
Oxides

Chip-level electrothermal simulator for temperature profile estimation of CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 580-583 4 p.

Research output: Contribution to journalArticle

Simulators
Packaging
Temperature
Networks (circuits)

iCET: A complete chip-level thermal reliability diagnosis tool for CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - Design Automation Conference. p. 548-551 4 p.

Research output: Contribution to journalArticle

Packaging materials
Networks (circuits)
Transistors
Simulators
Boundary conditions

iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., 1996, In : Annual Proceedings - Reliability Physics (Symposium). p. 172-179 8 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction
1997

Heat flow analysis for EOS/ESD protection device design in SOI technology

Raha, P., Ramaswamy, S. & Rosenbaum, E., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 3, p. 464-471 8 p.

Research output: Contribution to journalArticle

Heat transfer
Joule heating
Electric lines
Heating
Hot Temperature

ITEM: A temperature-dependent electromigration reliability diagnosis tool

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Dec 1 1997, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16, 8, p. 882-893 12 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction

Mechanism of stress-induced leakage current in MOS capacitors

Rosenbaum, E. & Register, L. F., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 2, p. 317-323 7 p.

Research output: Contribution to journalArticle

MOS capacitors
Leakage currents
Electric potential
Field emission
Oxides

Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Dec 1 1997, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 356-365 10 p.

Research output: Contribution to journalArticle

SOI (semiconductors)
thin films
predictions
field effect transistors
film thickness

Time-dependent snapback in thin-film SOI MOSFET's

Raha, P., Miller, J. W. & Rosenbaum, E., Nov 1 1997, In : IEEE Electron Device Letters. 18, 11, p. 509-511 3 p.

Research output: Contribution to journalArticle

Bipolar transistors
Thin films
Electric potential
1998

ESD robustness prediction and protection device design in partially depleted SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Jan 1 1998, In : Microelectronics Reliability. 38, 11, p. 1723-1731 9 p.

Research output: Contribution to journalArticle

Silicon on insulator technology
Silicon
insulators
silicon
predictions

ILLIADS-T: An electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips

Cheng, Y. K., Raha, P., Teng, C. C., Rosenbaum, E. & Kang, S. M., Dec 1 1998, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17, 8, p. 668-681 14 p.

Research output: Contribution to journalArticle

VLSI circuits
Simulators
Packaging
Specifications
Temperature
CMOS
electrostatics
simulation
layouts
silicon
1999

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Register, L. F., Rosenbaum, E. & Yang, K., Jan 18 1999, In : Applied Physics Letters. 74, 3, p. 457-459 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
Wentzel-Kramer-Brillouin method
silicon
electron impact

EOS/ESD reliability of partially depleted SOI technology

Raha, P., Diaz, C., Rosenbaum, E., Cao, M., Vandevoorde, P. & Greene, W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 2, p. 429-431 3 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Diodes
Simulators
Networks (circuits)
2000

Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.

Research output: Contribution to journalArticle

Deuterium
Anodes
Hydrogen
Oxides
Metallizing

Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Voldman, S., Juliano, P., Johnson, R., Schmidt, N., Joseph, A., Furkay, S., Rosenbaum, E., Dunn, J., Harame, D. & Meyerson, B., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 310-316 7 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Heterojunction bipolar transistors
Germanium
Silicon
Failure analysis

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

Li, E., Rosenbaum, E., Register, L. F., Tao, J. & Fang, P., 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 103-107 5 p.

Research output: Contribution to journalArticle

Hot carriers
Degradation
Networks (circuits)
Testing
Temperature

Interconnect thermal modeling for accurate simulation of circuit timing and reliability

Chen, D., Li, E., Rosenbaum, E. & Kang, S. M., Jan 1 2000, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 19, 2, p. 197-205 9 p.

Research output: Contribution to journalArticle

Timing circuits
Geometry
Temperature
Computer aided design
Current density

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

Hot carriers
MOSFET devices
Isotopes
Hot electrons
Oxides
2001
Level measurement
Electrostatic discharge
Electric lines

Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Wu, J., Juliano, P. & Rosenbaum, E., Nov 1 2001, In : Microelectronics Reliability. 41, 11, p. 1771-1779 9 p.

Research output: Contribution to journalArticle

Oxides
breakdown
damage
oxides
Electric potential

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Wang, Y., Juliano, P., Joshi, S. & Rosenbaum, E., Nov 1 2001, In : Microelectronics Reliability. 41, 11, p. 1781-1787 7 p.

Research output: Contribution to journalArticle

circuit protection
SOI (semiconductors)
Diodes
diodes
Networks (circuits)

Projecting lifetime of deep submicron MOSFETs

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.

Research output: Contribution to journalArticle

Degradation
Hot carriers
Deuterium
Electric potential
Metallizing

Trap generation and breakdown processes in very thin gate oxides

Rosenbaum, E. & Wu, J., May 2001, In : Microelectronics Reliability. 41, 5, p. 625-632 8 p.

Research output: Contribution to journalArticle

Oxides
breakdown
traps
Leakage currents
oxides
2002
Logic gates

Comprehensive frequency-dependent substrate noise analysis using boundary element methods

Li, H., Carballido, J., Yu, H. H., Okhmatovski, V. I., Rosenbaum, E. & Cangellaris, A. C., Jan 1 2002, In : IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers. p. 2-9 8 p.

Research output: Contribution to journalArticle

Boundary element method
Substrates
Electrodynamics
Green's function
Doping (additives)
2003

Cancellation technique to provide ESD protection for multi-GHz RF inputs

Hyvonen, S., Joshi, S. & Rosenbaum, E., Feb 6 2003, In : Electronics Letters. 39, 3, p. 284-286 3 p.

Research output: Contribution to journalArticle

ESD protection for broadband ICs (DC-20 GHz and beyond)

Joshi, S. & Rosenbaum, E., Jun 12 2003, In : Electronics Letters. 39, 12, p. 906-908 3 p.

Research output: Contribution to journalArticle

Microwave filters
Cutoff frequency
Networks (circuits)

Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation

Joshi, S. & Rosenbaum, E., Jul 1 2003, In : Microelectronics Reliability. 43, 7, p. 1021-1027 7 p.

Research output: Contribution to journalArticle

Circuit simulation
simulators
Transistors
transistors
Simulators
2004

Critical evaluation of SOI design guidelines

Kanj, R. & Rosenbaum, E., Sep 1 2004, In : IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 12, 9, p. 885-894 10 p.

Research output: Contribution to journalArticle

Silicon
Silicon on insulator technology
Logic design
Networks (circuits)
Adders

Design and optimization of vertical SiGe thyristors for on-chip BSD protection

Joshi, S., Ida, R. & Rosenbaum, E., Dec 1 2004, In : IEEE Transactions on Device and Materials Reliability. 4, 4, p. 586-593 8 p.

Research output: Contribution to journalArticle

Thyristors
Integrated circuits
Anodes
Geometry
Experiments

Gate oxide reliability under ESD-like pulse stress

Wu, J. & Rosenbaum, E., Jul 1 2004, In : IEEE Transactions on Electron Devices. 51, 7, p. 1192-1196 5 p.

Research output: Contribution to journalArticle

Oxides
Electrostatic discharge
Electric breakdown
Heating

Gate oxide reliability under ESD-like pulse stress

Wu, J. & Rosenbaum, E., Sep 1 2004, In : IEEE Transactions on Electron Devices. 51, 9, p. 1528-1532 5 p.

Research output: Contribution to journalArticle

Oxides
Electrostatic discharge
Electric breakdown
Heating
2005
Electric potential
Resonators

Combined TLP/RF testing system for detection of ESD failures in RF circuits

Hyvonen, S., Joshi, S. & Rosenbaum, E., Jul 1 2005, In : IEEE Transactions on Electronics Packaging Manufacturing. 28, 3, p. 224-230 7 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Leakage currents
Electric lines
Electric current measurement
Networks (circuits)

Comprehensive ESD protection for RF inputs

Hyvonen, S., Joshi, S. & Rosenbaum, E., Feb 1 2005, In : Microelectronics Reliability. 45, 2, p. 245-254 10 p.

Research output: Contribution to journalArticle

Networks (circuits)
circuit protection
human body
figure of merit
narrowband

Comprehensive study of drain breakdown in MOSFETs

Li, J., Li, H., Barnes, R. & Rosenbaum, E., Jun 1 2005, In : IEEE Transactions on Electron Devices. 52, 6, p. 1180-1186 7 p.

Research output: Contribution to journalArticle

Electric breakdown
Electric potential
Substrates

High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Joshi, S., Hyvonen, S. & Rosenbaum, E., Jul 1 2005, In : IEEE Transactions on Electron Devices. 52, 7, p. 1484-1488 5 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Capacitance
Trigger circuits
Matched filters
Resonators
2006

An automated and efficient substrate noise analysis tool

Li, H., Zemke, C. E., Manetas, G., Okhmatovski, V. I. & Rosenbaum, E., Mar 1 2006, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 25, 3, p. 454-468 15 p.

Research output: Contribution to journalArticle

Circuit simulation
Substrates
Boundary element method
Green's function

Compact modeling of on-chip ESD protection devices using Verilog-A

Li, J., Joshi, S., Barnes, R. & Rosenbaum, E., Jun 1 2006, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 25, 6, p. 1047-1063 17 p.

Research output: Contribution to journalArticle

Computer hardware description languages
Electrostatic discharge
Transistors
Resistors
Diodes
2007

A compact, ESD-protected, SiGe BiCMOS LNA for ultra-wideband applications

Bhatia, K., Hyvonen, S. & Rosenbaum, E., May 1 2007, In : IEEE Journal of Solid-State Circuits. 42, 5, p. 1121-1130 10 p.

Research output: Contribution to journalArticle

Low noise amplifiers
Ultra-wideband (UWB)
Noise figure
Broadband amplifiers
Heterojunction bipolar transistors
2009

A new compact model for external latchup

Farbiz, F. & Rosenbaum, E., Dec 1 2009, In : Microelectronics Reliability. 49, 12, p. 1447-1454 8 p.

Research output: Contribution to journalArticle

layouts
CMOS
spacing
Electric potential
electric potential