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2019

Measurement and simulation of on-chip supply noise induced by system-level ESD

Xiu, Y., Thomson, N. & Rosenbaum, E., Mar 2019, In : IEEE Transactions on Device and Materials Reliability. 19, 1, p. 211-220 10 p., 8640259.

Research output: Contribution to journalArticle

2017

ESD self-protection of high-speed transceivers using adaptive active bias conditioning

Keel, M. S. & Rosenbaum, E., Mar 2017, In : IEEE Transactions on Device and Materials Reliability. 17, 1, p. 113-120 8 p., 7744493.

Research output: Contribution to journalArticle

Soft-Failures Induced by System-Level ESD

Thomson, N. A., Xiu, Y. & Rosenbaum, E., Mar 2017, In : IEEE Transactions on Device and Materials Reliability. 17, 1, p. 90-98 9 p., 7851026.

Research output: Contribution to journalArticle

2016

A Study of BER-Optimal ADC-Based Receiver for Serial Links

Lin, Y., Keel, M. S., Faust, A., Xu, A., Shanbhag, N. R., Rosenbaum, E. & Singer, A. C., May 2016, In : IEEE Transactions on Circuits and Systems I: Regular Papers. 63, 5, p. 693-704 12 p., 7486052.

Research output: Contribution to journalArticle

CDM-reliable T-coil techniques for a 25-Gb/s wireline receiver front-end

Keel, M. S. & Rosenbaum, E., Dec 2016, In : IEEE Transactions on Device and Materials Reliability. 16, 4, p. 513-520 8 p., 7523221.

Research output: Contribution to journalArticle

Compact distributed multi-finger MOSFET model for circuit-level ESD simulation

Meng, K. H., Chen, Z. & Rosenbaum, E., Aug 1 2016, In : Microelectronics Reliability. 63, p. 11-21 11 p.

Research output: Contribution to journalArticle

Full-component modeling and simulation of charged device model ESD

Meng, K. H., Shukla, V. & Rosenbaum, E., Jul 2016, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 35, 7, p. 1105-1113 9 p., 7308012.

Research output: Contribution to journalArticle

Physical basis for CMOS SCR compact models

Mertens, R. & Rosenbaum, E., Jan 1 2016, In : IEEE Transactions on Electron Devices. 63, 1, p. 296-302 7 p., 7365555.

Research output: Contribution to journalArticle

2015

Analysis of active-clamp response to power-on ESD: Power supply integrity and performance tradeoffs

Mertens, R., Thomson, N., Xiu, Y. & Rosenbaum, E., Sep 1 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 263-271 9 p., 7177068.

Research output: Contribution to journalArticle

Charged Device Model Reliability of Three-Dimensional Integrated Circuits

Shukla, V. & Rosenbaum, E., Dec 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 4, p. 559-566 8 p., 7299296.

Research output: Contribution to journalArticle

Piecewise-linear model with transient relaxation for circuit-level ESD simulation

Meng, K. H., Mertens, R. & Rosenbaum, E., Sep 1 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 464-466 3 p., 7214270.

Research output: Contribution to journalArticle

2014

Prediction of charged device model peak discharge current for microelectronic components

Shukla, V., Boselli, G., Dissegna, M., Duvvury, C., Sankaralingam, R. & Rosenbaum, E., Sep 1 2014, In : IEEE Transactions on Device and Materials Reliability. 14, 3, p. 801-809 9 p., 6862855.

Research output: Contribution to journalArticle

2013

Comparison of FICDM and wafer-level CDM test methods

Jack, N. & Rosenbaum, E., Jul 1 2013, In : IEEE Transactions on Device and Materials Reliability. 13, 2, p. 379-387 9 p., 6515361.

Research output: Contribution to journalArticle

Verification of snapback model by transient I-V measurement for circuit simulation of ESD response

Meng, K. H. & Rosenbaum, E., Jul 1 2013, In : IEEE Transactions on Device and Materials Reliability. 13, 2, p. 371-378 8 p., 6504488.

Research output: Contribution to journalArticle

2012

Diode-triggered silicon-controlled rectifier with reduced voltage overshoot for CDM ESD protection

Chen, W. Y., Rosenbaum, E. & Ker, M. D., Mar 1 2012, In : IEEE Transactions on Device and Materials Reliability. 12, 1, p. 10-14 5 p., 6163575.

Research output: Contribution to journalArticle

2011

Comparison of wafer-level with package-level CDM stress facilitated by real-time probing

Jack, N., Shukla, V. & Rosenbaum, E., Dec 1 2011, In : IEEE Transactions on Device and Materials Reliability. 11, 4, p. 522-530 9 p., 6006519.

Research output: Contribution to journalArticle

Modeling and understanding of external latchup in CMOS technologies-part I: Modeling latchup trigger current

Farbiz, F. & Rosenbaum, E., Sep 1 2011, In : IEEE Transactions on Device and Materials Reliability. 11, 3, p. 417-425 9 p., 5875872.

Research output: Contribution to journalArticle

2010

A scalable SCR compact model for ESD circuit simulation

Di Sarro, J. P. & Rosenbaum, E., Dec 1 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3275-3286 12 p., 5610716.

Research output: Contribution to journalArticle

2009

A new compact model for external latchup

Farbiz, F. & Rosenbaum, E., Dec 1 2009, In : Microelectronics Reliability. 49, 12, p. 1447-1454 8 p.

Research output: Contribution to journalArticle

Layout optimization of ESD protection diodes for high-frequency I/Os

Bhatia, K., Jack, N. & Rosenbaum, E., Sep 1 2009, In : IEEE Transactions on Device and Materials Reliability. 9, 3, p. 465-475 11 p., 5153318.

Research output: Contribution to journalArticle

Oscillatory transmission line pulsing for characterization of device transient response

Di Sarro, J. P. & Rosenbaum, E., Jan 1 2009, In : IEEE Electron Device Letters. 30, 2, p. 168-170 3 p.

Research output: Contribution to journalArticle

2007

A compact, ESD-protected, SiGe BiCMOS LNA for ultra-wideband applications

Bhatia, K., Hyvonen, S. & Rosenbaum, E., May 1 2007, In : IEEE Journal of Solid-State Circuits. 42, 5, p. 1121-1130 10 p.

Research output: Contribution to journalArticle

2006

An automated and efficient substrate noise analysis tool

Li, H., Zemke, C. E., Manetas, G., Okhmatovski, V. I. & Rosenbaum, E., Mar 1 2006, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 25, 3, p. 454-468 15 p.

Research output: Contribution to journalArticle

Compact modeling of on-chip ESD protection devices using Verilog-A

Li, J., Joshi, S., Barnes, R. & Rosenbaum, E., Jun 2006, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 25, 6, p. 1047-1063 17 p.

Research output: Contribution to journalArticle

2005

Combined TLP/RF testing system for detection of ESD failures in RF circuits

Hyvonen, S., Joshi, S. & Rosenbaum, E., Jul 1 2005, In : IEEE Transactions on Electronics Packaging Manufacturing. 28, 3, p. 224-230 7 p.

Research output: Contribution to journalArticle

Comprehensive ESD protection for RF inputs

Hyvonen, S., Joshi, S. & Rosenbaum, E., Feb 1 2005, In : Microelectronics Reliability. 45, 2, p. 245-254 10 p.

Research output: Contribution to journalArticle

Comprehensive study of drain breakdown in MOSFETs

Li, J., Li, H., Barnes, R. & Rosenbaum, E., Jun 1 2005, In : IEEE Transactions on Electron Devices. 52, 6, p. 1180-1186 7 p.

Research output: Contribution to journalArticle

High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Joshi, S., Hyvonen, S. & Rosenbaum, E., Jul 1 2005, In : IEEE Transactions on Electron Devices. 52, 7, p. 1484-1488 5 p.

Research output: Contribution to journalArticle

2004

Critical evaluation of SOI design guidelines

Kanj, R. & Rosenbaum, E., Sep 1 2004, In : IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 12, 9, p. 885-894 10 p.

Research output: Contribution to journalArticle

Design and optimization of vertical SiGe thyristors for on-chip BSD protection

Joshi, S., Ida, R. & Rosenbaum, E., Dec 1 2004, In : IEEE Transactions on Device and Materials Reliability. 4, 4, p. 586-593 8 p.

Research output: Contribution to journalArticle

Gate oxide reliability under ESD-like pulse stress

Wu, J. & Rosenbaum, E., Jul 1 2004, In : IEEE Transactions on Electron Devices. 51, 7, p. 1192-1196 5 p.

Research output: Contribution to journalArticle

Gate oxide reliability under ESD-like pulse stress

Wu, J. & Rosenbaum, E., Sep 1 2004, In : IEEE Transactions on Electron Devices. 51, 9, p. 1528-1532 5 p.

Research output: Contribution to journalArticle

2003

Cancellation technique to provide ESD protection for multi-GHz RF inputs

Hyvonen, S., Joshi, S. & Rosenbaum, E., Feb 6 2003, In : Electronics Letters. 39, 3, p. 284-286 3 p.

Research output: Contribution to journalArticle

ESD protection for broadband ICs (DC-20 GHz and beyond)

Joshi, S. & Rosenbaum, E., Jun 12 2003, In : Electronics Letters. 39, 12, p. 906-908 3 p.

Research output: Contribution to journalArticle

Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation

Joshi, S. & Rosenbaum, E., Jul 1 2003, In : Microelectronics Reliability. 43, 7, p. 1021-1027 7 p.

Research output: Contribution to journalArticle

2002

Comprehensive frequency-dependent substrate noise analysis using boundary element methods

Li, H., Carballido, J., Yu, H. H., Okhmatovski, V. I., Rosenbaum, E. & Cangellaris, A. C., Jan 1 2002, In : IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers. p. 2-9 8 p.

Research output: Contribution to journalArticle

2001

Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Wu, J., Juliano, P. & Rosenbaum, E., Nov 1 2001, In : Microelectronics Reliability. 41, 11, p. 1771-1779 9 p.

Research output: Contribution to journalArticle

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Wang, Y., Juliano, P., Joshi, S. & Rosenbaum, E., Nov 1 2001, In : Microelectronics Reliability. 41, 11, p. 1781-1787 7 p.

Research output: Contribution to journalArticle

Projecting lifetime of deep submicron MOSFETs

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.

Research output: Contribution to journalArticle

Trap generation and breakdown processes in very thin gate oxides

Rosenbaum, E. & Wu, J., May 2001, In : Microelectronics Reliability. 41, 5, p. 625-632 8 p.

Research output: Contribution to journalArticle

2000

Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.

Research output: Contribution to journalArticle

Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Voldman, S., Juliano, P., Johnson, R., Schmidt, N., Joseph, A., Furkay, S., Rosenbaum, E., Dunn, J., Harame, D. & Meyerson, B., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 310-316 7 p.

Research output: Contribution to journalArticle

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

Li, E., Rosenbaum, E., Register, L. F., Tao, J. & Fang, P., 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 103-107 5 p.

Research output: Contribution to journalArticle

Interconnect thermal modeling for accurate simulation of circuit timing and reliability

Chen, D., Li, E., Rosenbaum, E. & Kang, S. M., Jan 1 2000, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 19, 2, p. 197-205 9 p.

Research output: Contribution to journalArticle

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

1999

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Register, L. F., Rosenbaum, E. & Yang, K., Jan 18 1999, In : Applied Physics Letters. 74, 3, p. 457-459 3 p.

Research output: Contribution to journalArticle