1989 …2019
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Research Output 1989 2019

Physical basis for CMOS SCR compact models

Mertens, R. & Rosenbaum, E., Jan 1 2016, In : IEEE Transactions on Electron Devices. 63, 1, p. 296-302 7 p., 7365555.

Research output: Contribution to journalArticle

Thyristors
Bipolar transistors
Silicon
Physics

Piecewise-linear model with transient relaxation for circuit-level ESD simulation

Meng, K. H., Mertens, R. & Rosenbaum, E., Sep 1 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 464-466 3 p., 7214270.

Research output: Contribution to journalArticle

Electrostatic discharge
Networks (circuits)
Finite automata

Practical methodology for the extraction of SEED models

Reiman, C., Thomson, N., Xiu, Y., Mertens, R. & Rosenbaum, E., Oct 30 2015, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2015. ESD Association, (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated circuits

Prediction of charged device model peak discharge current for microelectronic components

Shukla, V., Boselli, G., Dissegna, M., Duvvury, C., Sankaralingam, R. & Rosenbaum, E., Sep 1 2014, In : IEEE Transactions on Device and Materials Reliability. 14, 3, p. 801-809 9 p., 6862855.

Research output: Contribution to journalArticle

Microelectronics
Electrostatic discharge

Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Dec 1 1997, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 356-365 10 p.

Research output: Contribution to journalArticle

SOI (semiconductors)
thin films
predictions
field effect transistors
film thickness

Predictive modeling of peak discharge current during charged device model test of microelectronic components

Shukla, V., Boselli, G., Dissegna, M., Duvvury, C., Sankaralingam, R. & Rosenbaum, E., Oct 16 2013, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013. 6635951. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Microelectronics
Electric potential

Predictive simulation of CDM events to study effects of package, substrate resistivity and placement of ESD protection circuits on reliability of integrated circuits

Shukla, V., Jack, N. & Rosenbaum, E., Oct 20 2010, 2010 IEEE International Reliability Physics Symposium, IRPS 2010. p. 485-493 9 p. 5488782. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated circuits
Networks (circuits)
Substrates
Clamping devices
Diodes

Preface

Rosenbaum, E., May 25 2018, In : IEEE International Reliability Physics Symposium Proceedings. 2018-March, 1 p.

Research output: Contribution to journalEditorial

Present understanding of gate oxide wearout

Rosenbaum, E. & Wu, J., Jan 1 2000, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. Grunbacher, H., Crean, G. M., Lane, W. A. & McCabe, F. A. (eds.). IEEE Computer Society, p. 54-59 6 p. 1503647. (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lead oxide
Electron traps
Oxides
Electron tunneling
Conduction bands

Projecting lifetime of deep submicron MOSFETs

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.

Research output: Contribution to journalArticle

Degradation
Hot carriers
Deuterium
Electric potential
Metallizing

Relation between oxide degradation and oxide breakdown

Felsch, C. & Rosenbaum, E., 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 142-148 7 p.

Research output: Contribution to journalArticle

Degradation
Oxides
Electron traps
Charge trapping

Separating SCR and trigger circuit related overshoot in SCR-based ESD protection circuits

Mertens, R. & Rosenbaum, E., Oct 16 2013, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013. 6635915. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Trigger circuits
Thyristors
Networks (circuits)
Circuit simulation
Electric potential

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Rosenbaum, E., Liu, Z. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2287-2295 9 p.

Research output: Contribution to journalArticle

Silicon Dioxide
hole distribution
Oxides
breakdown
Silica

Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation

Joshi, S. & Rosenbaum, E., Jul 1 2003, In : Microelectronics Reliability. 43, 7, p. 1021-1027 7 p.

Research output: Contribution to journalArticle

Circuit simulation
simulators
Transistors
transistors
Simulators

Small footprint trigger voltage control circuit for mixed-voltage applications

Olson, N., Vashchenko, V., Rosenbaum, E. & Hopper, P., Dec 1 2008, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 196-203 8 p., 4772134.

Research output: Contribution to journalConference article

Voltage control
Networks (circuits)
Electric potential

Soft-Failures Induced by System-Level ESD

Thomson, N. A., Xiu, Y. & Rosenbaum, E., Mar 2017, In : IEEE Transactions on Device and Materials Reliability. 17, 1, p. 90-98 9 p., 7851026.

Research output: Contribution to journalArticle

Magnetic couplings
Earth (planet)
Derivatives
Networks (circuits)
Substrates

SOI poly-defined diode for ESD protection in high speed I/Os

Chen, V., Salman, A., Beebe, S., Rosenbaum, E., Mitra, S., Putnam, C. & Gauthier, R., Dec 1 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 635-636 2 p. 4017240. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Diodes

S-parameter based modeling of system-level ESD test bed

Xiu, Y., Thomson, N., Mertens, R. & Rosenbaum, E., Oct 30 2015, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2015. ESD Association, (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Scattering parameters
Networks (circuits)

Special Issue on Reliability

Mahapatra, S., Chen, K. J., Kaczer, B., Pancheri, L., Rosenbaum, E., Mouli, C., Wong, H., Kerber, A., Monzio Compagnoni, C., Koval, R., Meneghesso, G., Sheridan, D., Ramey, S., Wang, R. & Stathis, J., Nov 2019, In : IEEE Transactions on Electron Devices. 66, 11, p. 4497-4503 7 p., 8886623.

Research output: Contribution to journalEditorial

Stochastic modeling of air electrostatic discharge parameters

Xiu, Y., Sagan, S., Battini, A., Ma, X., Raginsky, M. & Rosenbaum, E., May 25 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. 2C.21-2C.210 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electrostatic discharge
Atmospheric humidity
Electric potential
Air
Discharge (fluid mechanics)

Study of a CMOS I/O protection circuit using circuit-level simulation

Li, T., Suh, D., Ramaswamy, S., Bendix, P., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1997, In : Annual Proceedings - Reliability Physics (Symposium). p. 333-338 6 p.

Research output: Contribution to journalConference article

Networks (circuits)
Experiments

Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies

Sarro, J. D., Chatty, K., Gauthier, R. & Rosenbaum, E., Dec 1 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 163-168 6 p. 4017151. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thyristors
Electric lines

Substrate modeling and lumped substrate resistance extraction for CMOS ESD/latchup circuit simulation

Li, T., Tsai, C. H., Rosenbaum, E. & Kang, S. M., Jan 1 1999, In : Proceedings - Design Automation Conference. p. 549-554 6 p.

Research output: Contribution to journalConference article

Electrostatic discharge
Circuit simulation
Substrates
Networks (circuits)
Integrated circuit layout
CMOS
electrostatics
simulation
layouts
silicon

Test chip design for study of CDM related failures in SoC designs

Olson, N., Shukla, V. & Rosenbaum, E., Jun 23 2011, 2011 International Reliability Physics Symposium, IRPS 2011. 5784566. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Testing

The effects of oxide stress waveform on MOSFET performance

Rosenbaum, E., Liu, Z. & Hu, C., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 719-722 4 p. 235322. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
waveforms
field effect transistors
oxides
Degradation

The need for transient I-V measurement of device ESD response

Meng, K. H. & Rosenbaum, E., Nov 27 2012, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012. 6333318. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Circuit simulation
Tuning
Testing

Theory of active clamp response to power-on ESD and implications for power supply integrity

Mertens, R., Thomson, N., Xiu, Y. & Rosenbaum, E., Nov 26 2014, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2014-November, November

Research output: Contribution to journalConference article

Trigger circuits
Clamping devices
Bandwidth
Networks (circuits)

Time-dependent snapback in thin-film SOI MOSFET's

Raha, P., Miller, J. W. & Rosenbaum, E., Nov 1 1997, In : IEEE Electron Device Letters. 18, 11, p. 509-511 3 p.

Research output: Contribution to journalArticle

Bipolar transistors
Thin films
Electric potential

Transmission line pulsed waveform shaping with microwave filters

Joshi, S. & Rosenbaum, E., 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003. ESD Association, Vol. 2003-January. 5272002

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Microwave filters
Electric lines
Passive filters
Matched filters
Low pass filters

Trap-assisted tunneling current through ultra-thin oxide

Wu, J., Register, L. F. & Rosenbaum, E., Jan 1 1999, Annual Proceedings - Reliability Physics (Symposium). IEEE, p. 389-395 7 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron tunneling
Conduction bands
Leakage currents
Cathodes
Oxides

Trap generation and breakdown processes in very thin gate oxides

Rosenbaum, E. & Wu, J., May 2001, In : Microelectronics Reliability. 41, 5, p. 625-632 8 p.

Research output: Contribution to journalArticle

Oxides
breakdown
traps
Leakage currents
oxides

Understanding transient latchup hazards and the impact of guard rings

Farbiz, F. & Rosenbaum, E., Oct 20 2010, 2010 IEEE International Reliability Physics Symposium, IRPS 2010. p. 466-473 8 p. 5488787. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hazards
Testing

UVeriESD: An ESD verification tool for SoC design

Kelvin Hsueh, K., Ke, S. H., Lee, J. & Rosenbaum, E., Dec 1 2008, Proceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems. p. 53-56 4 p. 4745958. (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hazards
Planning
Defects
System-on-chip
Voltage drop

Verification of snapback model by transient I-V measurement for circuit simulation of ESD response

Meng, K. H. & Rosenbaum, E., Jul 1 2013, In : IEEE Transactions on Device and Materials Reliability. 13, 2, p. 371-378 8 p., 6504488.

Research output: Contribution to journalArticle

Electrostatic discharge
Circuit simulation
Relaxation oscillators
Testing

Verilog-A compatible recurrent neural network model for transient circuit simulation

Chen, Z., Raginsky, M. & Rosenbaum, E., Apr 2 2018, 2017 IEEE 26th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-3 3 p. (2017 IEEE 26th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2017; vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Computer hardware description languages
Recurrent neural networks
Circuit simulation
Networks (circuits)
Simulators

Voltage clamping requirements for ESD protection of inputs in 90nm CMOS technology

Lee, J. & Rosenbaum, E., Dec 1 2008, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 50-58 9 p., 4772114.

Research output: Contribution to journalConference article

Electric breakdown
Gate dielectrics
Electric potential
Transistors
Degradation

Voltage monitor circuit for ESD diagnosis

Jack, N. & Rosenbaum, E., Nov 10 2011, Electrical Overstress/Electrostatic Discharge Symposium Proceedings - 2011, EOS/ESD 2011. 6045614. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Networks (circuits)
Electric potential

WCDM2 - Wafer-level charged device model testing with high repeatability

Jack, N., Maloney, T. J., Chou, B. & Rosenbaum, E., Jun 23 2011, 2011 International Reliability Physics Symposium, IRPS 2011. 5784509. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Testing