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Research Output

1998

CMOS hot carrier lifetime improvement from deuterium anneal

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Dec 1 1998, p. 22-23. 2 p.

Research output: Contribution to conferencePaper

ESD robustness prediction and protection device design in partially depleted SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Jan 1 1998, In : Microelectronics Reliability. 38, 11, p. 1723-1731 9 p.

Research output: Contribution to journalArticle

ILLIADS-T: An electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips

Cheng, Y. K., Raha, P., Teng, C. C., Rosenbaum, E. & Kang, S. M., Dec 1 1998, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17, 8, p. 668-681 14 p.

Research output: Contribution to journalArticle

Modeling, extraction and simulation of CMOS I/O circuits under ESD stress

Li, T., Tsai, C. H., Rosenbaum, E. & Kang, S. M., Jan 1 1998, In : Proceedings - IEEE International Symposium on Circuits and Systems. 6, p. 389-392 4 p.

Research output: Contribution to journalConference article

Optimum design for a two-stage CMOS I/O ESD protection circuit

Li, T., Bendix, P., Suh, D., Huh, Y. J., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1998, In : Proceedings - IEEE International Symposium on Circuits and Systems. 2, p. 113-116 4 p.

Research output: Contribution to journalConference article

1997

Circuit-level simulation and layout optimization for deep submicron EOS/ESD output protection device

Li, T., Ramaswamy, S., Rosenbaum, E. & Kang, S. M., Jan 1 1997, In : Proceedings of the Custom Integrated Circuits Conference. p. 159-162 4 p.

Research output: Contribution to journalConference article

Heat flow analysis for EOS/ESD protection device design in SOI technology

Raha, P., Ramaswamy, S. & Rosenbaum, E., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 3, p. 464-471 8 p.

Research output: Contribution to journalArticle

ITEM: A temperature-dependent electromigration reliability diagnosis tool

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Dec 1 1997, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16, 8, p. 882-893 12 p.

Research output: Contribution to journalArticle

Mechanism of stress-induced leakage current in MOS capacitors

Rosenbaum, E. & Register, L. F., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 2, p. 317-323 7 p.

Research output: Contribution to journalArticle

New algorithm for circuit-level electrothermal simulation under EOS/ESD stress

Li, T., Tsai, C. H., Huh, Y. J., Rosenbaum, E. & Kang, S. M., Dec 1 1997, p. 130-131. 2 p.

Research output: Contribution to conferencePaper

Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Dec 1 1997, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 356-365 10 p.

Research output: Contribution to journalArticle

Study of a CMOS I/O protection circuit using circuit-level simulation

Li, T., Suh, D., Ramaswamy, S., Bendix, P., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1997, In : Annual Proceedings - Reliability Physics (Symposium). p. 333-338 6 p.

Research output: Contribution to journalConference article

Time-dependent snapback in thin-film SOI MOSFET's

Raha, P., Miller, J. W. & Rosenbaum, E., Nov 1 1997, In : IEEE Electron Device Letters. 18, 11, p. 509-511 3 p.

Research output: Contribution to journalArticle

1996

Accelerated testing of SiC>2 reliability

Rosenbaum, E., King, J. C. & Hu, C., Dec 1 1996, In : IEEE Transactions on Electron Devices. 43, 1, p. 70-80 11 p.

Research output: Contribution to journalArticle

Chip-level electrothermal simulator for temperature profile estimation of CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 580-583 4 p.

Research output: Contribution to journalArticle

Circuit-level simulation of CDM-ESD and EOS in submicron MOS devices

Ramaswamy, S., Li, E., Rosenbaum, E. & Kang, S. M., Dec 1 1996, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 316-321 6 p.

Research output: Contribution to journalConference article

ETS-A: A new electrothermal simulator for CMOS VLSI circuits

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Mar 11 1996, Proceedings of the 1996 European Conference on Design and Test, EDTC 1996. Association for Computing Machinery, Inc, p. 566-570 5 p. 494357. (Proceedings of the 1996 European Conference on Design and Test, EDTC 1996).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ETS-A: A new electrothermal simulator for CMOS VLSI circuits

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings of European Design and Test Conference. p. 566-570 5 p.

Research output: Contribution to journalConference article

Hierarchical electromigration reliability diagnosis for VLSI interconnects

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings - Design Automation Conference. p. 752-757 6 p.

Research output: Contribution to journalConference article

iCET: A complete chip-level thermal reliability diagnosis tool for CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - Design Automation Conference. p. 548-551 4 p.

Research output: Contribution to journalArticle

Improvement on chip-level electrothermal simulator - ILLIADS-T

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 432-435 4 p.

Research output: Contribution to journalConference article

iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., 1996, In : Annual Proceedings - Reliability Physics (Symposium). p. 172-179 8 p.

Research output: Contribution to journalArticle

1995

Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits

Rosenbaum, E. & Hu, C., Aug 1995, In : IEEE Transactions on Semiconductor Manufacturing. 8, 3, p. 370-374 5 p.

Research output: Contribution to journalArticle

EOS/ESD protection circuit design for deep submicron SOI technology

Ramaswamy, S., Raha, P., Rosenbaum, E. & Kang, S. M., Dec 1 1995, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 212-217 6 p.

Research output: Contribution to journalConference article

Fast timing simulation for submicron hot-carrier degradation

Sun, W., Rosenbaum, E. & Kang, S. M., Jan 1 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 65-71 7 p.

Research output: Contribution to journalConference article

Relation between oxide degradation and oxide breakdown

Felsch, C. & Rosenbaum, E., 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 142-148 7 p.

Research output: Contribution to journalArticle

1994

Circuit-level electrothermal simulation techniques for designing output protection devices

Ramaswamy, S., Rosenbaum, E. & Kang, S. M., Dec 1 1994, p. 79-82. 4 p.

Research output: Contribution to conferencePaper

1993

A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Quader, K. N., Li, C. C., Tu, R., Rosenbaum, E., Ko, P. K. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2245-2254 10 p.

Research output: Contribution to journalArticle

Berkeley Reliability Tools-BERT

Tu, R. H., Rosenbaum, E., Chan, W. Y., Li, C. C., Minami, E., Quader, K., Keung Ko, P. & Hu, C., Oct 1993, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12, 10, p. 1524-1534 11 p.

Research output: Contribution to journalArticle

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Rosenbaum, E., Liu, Z. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2287-2295 9 p.

Research output: Contribution to journalArticle

1991

A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Liu, Z. H., Rosenbaum, E., Ko, P. K., Hu, C., Cheng, Y. C., Sodini, C. G., Gross, B. J. & Ma, T. P., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 723-726 4 p. 235321. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs

Quader, K. N., Li, C., Tu, R., Rosenbaum, E., Ko, P. & Hu, C., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 337-340 4 p. 235384. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Rosenbaum, E., Rofan, R. & Hu, C., Nov 1991, In : IEEE Electron Device Letters. 12, 11, p. 599-601 3 p.

Research output: Contribution to journalArticle

High-Frequency Time-Dependent Breakdown of SiO2

Rosenbaum, E. & Hu, C., Jun 1991, In : IEEE Electron Device Letters. 12, 6, p. 267-269 3 p.

Research output: Contribution to journalArticle

Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing

Rosenbaum, E., Moazzami, R. & Hu, C., Jan 1 1991, 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., p. 214-218 5 p. 246679. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The effects of oxide stress waveform on MOSFET performance

Rosenbaum, E., Liu, Z. & Hu, C., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 719-722 4 p. 235322. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1989

Circuit reliability simulator--Oxide breakdown module

Rosenbaum, E., Lee, P. M., Moazzami, R., Ko, P. K. & Hu, C., 1989, In : Technical Digest - International Electron Devices Meeting. p. 331-334 4 p.

Research output: Contribution to journalArticle