1989 …2019
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Research Output 1989 2019

Article

ITEM: A temperature-dependent electromigration reliability diagnosis tool

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Dec 1 1997, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16, 8, p. 882-893 12 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction

Layout optimization of ESD protection diodes for high-frequency I/Os

Bhatia, K., Jack, N. & Rosenbaum, E., Sep 1 2009, In : IEEE Transactions on Device and Materials Reliability. 9, 3, p. 465-475 11 p., 5153318.

Research output: Contribution to journalArticle

Diodes
Metals
Geometry
Experiments

Measurement and simulation of on-chip supply noise induced by system-level ESD

Xiu, Y., Thomson, N. & Rosenbaum, E., Mar 2019, In : IEEE Transactions on Device and Materials Reliability. 19, 1, p. 211-220 10 p., 8640259.

Research output: Contribution to journalArticle

Networks (circuits)
Circuit simulation
Electric potential
Flip flop circuits

Mechanism of stress-induced leakage current in MOS capacitors

Rosenbaum, E. & Register, L. F., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 2, p. 317-323 7 p.

Research output: Contribution to journalArticle

MOS capacitors
Leakage currents
Electric potential
Field emission
Oxides

Modeling and understanding of external latchup in CMOS technologies-part I: Modeling latchup trigger current

Farbiz, F. & Rosenbaum, E., Sep 1 2011, In : IEEE Transactions on Device and Materials Reliability. 11, 3, p. 417-425 9 p., 5875872.

Research output: Contribution to journalArticle

Substrates
Networks (circuits)
Testing
Substrates
Electric potential
Temperature

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I., Chetlur, S. & Huang, R., Jan 1 2000, In : IEEE Electron Device Letters. 21, 1, p. 24-26 3 p.

Research output: Contribution to journalArticle

Hot carriers
MOSFET devices
Isotopes
Hot electrons
Oxides

Oscillatory transmission line pulsing for characterization of device transient response

Di Sarro, J. P. & Rosenbaum, E., Jan 1 2009, In : IEEE Electron Device Letters. 30, 2, p. 168-170 3 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Transient analysis
Electric lines
Thyristors
Electric potential

Physical basis for CMOS SCR compact models

Mertens, R. & Rosenbaum, E., Jan 1 2016, In : IEEE Transactions on Electron Devices. 63, 1, p. 296-302 7 p., 7365555.

Research output: Contribution to journalArticle

Thyristors
Bipolar transistors
Silicon
Physics

Piecewise-linear model with transient relaxation for circuit-level ESD simulation

Meng, K. H., Mertens, R. & Rosenbaum, E., Sep 1 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 464-466 3 p., 7214270.

Research output: Contribution to journalArticle

Electrostatic discharge
Networks (circuits)
Finite automata

Prediction of charged device model peak discharge current for microelectronic components

Shukla, V., Boselli, G., Dissegna, M., Duvvury, C., Sankaralingam, R. & Rosenbaum, E., Sep 1 2014, In : IEEE Transactions on Device and Materials Reliability. 14, 3, p. 801-809 9 p., 6862855.

Research output: Contribution to journalArticle

Microelectronics
Electrostatic discharge

Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Dec 1 1997, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 356-365 10 p.

Research output: Contribution to journalArticle

SOI (semiconductors)
thin films
predictions
field effect transistors
film thickness

Projecting lifetime of deep submicron MOSFETs

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Apr 1 2001, In : IEEE Transactions on Electron Devices. 48, 4, p. 671-678 8 p.

Research output: Contribution to journalArticle

Degradation
Hot carriers
Deuterium
Electric potential
Metallizing

Relation between oxide degradation and oxide breakdown

Felsch, C. & Rosenbaum, E., 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 142-148 7 p.

Research output: Contribution to journalArticle

Degradation
Oxides
Electron traps
Charge trapping

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Rosenbaum, E., Liu, Z. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2287-2295 9 p.

Research output: Contribution to journalArticle

Silicon Dioxide
hole distribution
Oxides
breakdown
Silica

Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation

Joshi, S. & Rosenbaum, E., Jul 1 2003, In : Microelectronics Reliability. 43, 7, p. 1021-1027 7 p.

Research output: Contribution to journalArticle

Circuit simulation
simulators
Transistors
transistors
Simulators

Soft-Failures Induced by System-Level ESD

Thomson, N. A., Xiu, Y. & Rosenbaum, E., Mar 2017, In : IEEE Transactions on Device and Materials Reliability. 17, 1, p. 90-98 9 p., 7851026.

Research output: Contribution to journalArticle

Magnetic couplings
Earth (planet)
Derivatives
Networks (circuits)
Substrates
CMOS
electrostatics
simulation
layouts
silicon

Time-dependent snapback in thin-film SOI MOSFET's

Raha, P., Miller, J. W. & Rosenbaum, E., Nov 1 1997, In : IEEE Electron Device Letters. 18, 11, p. 509-511 3 p.

Research output: Contribution to journalArticle

Bipolar transistors
Thin films
Electric potential

Trap generation and breakdown processes in very thin gate oxides

Rosenbaum, E. & Wu, J., May 2001, In : Microelectronics Reliability. 41, 5, p. 625-632 8 p.

Research output: Contribution to journalArticle

Oxides
breakdown
traps
Leakage currents
oxides

Verification of snapback model by transient I-V measurement for circuit simulation of ESD response

Meng, K. H. & Rosenbaum, E., Jul 1 2013, In : IEEE Transactions on Device and Materials Reliability. 13, 2, p. 371-378 8 p., 6504488.

Research output: Contribution to journalArticle

Electrostatic discharge
Circuit simulation
Relaxation oscillators
Testing
Comment/debate

Data-driven reliability for datacenter hard disk drives

Yang, A., Ghassami, A. E., Rosenbaum, E. & Kiyavash, N., May 2019, In : Electronic Device Failure Analysis. 21, 2, p. 18-20 3 p.

Research output: Contribution to journalComment/debate

Hard disk storage
Conference article

A co-optimization methodology on ESD robustness and functionality for pad-ring circuitry

Meng, K. H., Gerdemann, A., Miller, J. W. & Rosenbaum, E., Nov 26 2014, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2014-November, November

Research output: Contribution to journalConference article

A dual-base triggered SCR with very low leakage current and adjustable trigger voltage

Sarro, J. D., Vashchenko, V., Rosenbaum, E. & Hopper, P., Dec 1 2008, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 242-248 7 p., 4772140.

Research output: Contribution to journalConference article

Trigger circuits
Thyristors
Leakage currents
Electric potential

A mechanism for logic upset induced by power-on ESD

Xiu, Y., Thomson, N., Mertens, R. & Rosenbaum, E., Nov 26 2014, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2014-November, November

Research output: Contribution to journalConference article

Transistors

A novel SCR macromodel for ESD circuit simulation

Juliano, P. A. & Rosenbaum, E., Dec 1 2001, In : Technical Digest - International Electron Devices Meeting. p. 319-322 4 p.

Research output: Contribution to journalConference article

silicon controlled rectifiers
Electrostatic discharge
Circuit simulation
Thyristors
electrostatics

A Verilog-A compact model for ESD protection NMOSTs

Li, J., Joshi, S. & Rosenbaum, E., Nov 19 2003, In : Proceedings of the Custom Integrated Circuits Conference. p. 253-256 4 p.

Research output: Contribution to journalConference article

Computer hardware description languages
Simulators
Networks (circuits)

Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Wu, J., Juliano, P. & Rosenbaum, E., Dec 1 2000, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 287-295 9 p.

Research output: Contribution to journalConference article

breakdown
damage
oxides
pulse duration
traps

Circuit-level simulation and layout optimization for deep submicron EOS/ESD output protection device

Li, T., Ramaswamy, S., Rosenbaum, E. & Kang, S. M., Jan 1 1997, In : Proceedings of the Custom Integrated Circuits Conference. p. 159-162 4 p.

Research output: Contribution to journalConference article

Networks (circuits)
Silicon
Hot Temperature

Circuit-level simulation of CDM-ESD and EOS in submicron MOS devices

Ramaswamy, S., Li, E., Rosenbaum, E. & Kang, S. M., Dec 1 1996, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 316-321 6 p.

Research output: Contribution to journalConference article

simulation
breakdown
simulators
temperature

Comprehensive frequency-dependent substrate noise analysis using boundary element methods

Li, H., Carballido, J., Yu, H. H., Okhmatovski, V. I., Rosenbaum, E. & Cangellaris, A. C., Dec 1 2002, In : IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers. p. 2-9 8 p.

Research output: Contribution to journalConference article

Boundary element method
Substrates
Electrodynamics
Green's function
Doping (additives)

Custom test chip for system-level ESD investinvestigations

Thomson, N., Xiu, Y., Mertens, R., Keel, M. S. & Rosenbaum, E., Nov 26 2014, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2014-November, November

Research output: Contribution to journalConference article

Logic circuits
Transmitters
Detectors
Monitoring
Testing

Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Voldman, S., Juliano, P., Schmidt, N., Johnson, R., Lanzerotti, L., Joseph, A., Brennan, C., Dunn, J., Harame, D., Rosenbaum, E. & Meyerson, B., Dec 1 2000, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 239-250 12 p.

Research output: Contribution to journalConference article

bipolar transistors
accumulators
heterojunctions
germanium
electrostatics

Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies

Wang, Y., Juliano, P., Joshi, S. & Rosenbaum, E., Dec 1 2000, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 430-436 7 p.

Research output: Contribution to journalConference article

SOI (semiconductors)
diodes
simulators
high current
breakdown

EOS/ESD protection circuit design for deep submicron SOI technology

Ramaswamy, S., Raha, P., Rosenbaum, E. & Kang, S. M., Dec 1 1995, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 212-217 6 p.

Research output: Contribution to journalConference article

circuit protection
insulators
silicon
failure modes
immunity

ETS-A: A new electrothermal simulator for CMOS VLSI circuits

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings of European Design and Test Conference. p. 566-570 5 p.

Research output: Contribution to journalConference article

VLSI circuits
Simulators
Packaging
Temperature
MOSFET devices

Fast timing simulation for submicron hot-carrier degradation

Sun, W., Rosenbaum, E. & Kang, S. M., Jan 1 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 65-71 7 p.

Research output: Contribution to journalConference article

Hot carriers
Transistors
CMOS integrated circuits
Degradation
Integrated circuits

Hierarchical electromigration reliability diagnosis for VLSI interconnects

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings - Design Automation Conference. p. 752-757 6 p.

Research output: Contribution to journalConference article

Electromigration
Computer aided design
Networks (circuits)

Improvement on chip-level electrothermal simulator - ILLIADS-T

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 432-435 4 p.

Research output: Contribution to journalConference article

Simulators
Heat transfer
Networks (circuits)
Composite materials

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I. & Chetlur, S., Dec 1 1999, In : Technical Digest - International Electron Devices Meeting. p. 85-88 4 p.

Research output: Contribution to journalConference article

Hot carriers
MOSFET devices
Isotopes
transistors
traps

Modeling, extraction and simulation of CMOS I/O circuits under ESD stress

Li, T., Tsai, C. H., Rosenbaum, E. & Kang, S. M., Jan 1 1998, In : Proceedings - IEEE International Symposium on Circuits and Systems. 6, p. 389-392 4 p.

Research output: Contribution to journalConference article

Networks (circuits)
Computer aided design
Substrates
Simulators

Noise characterization of static CMOS gates

Kanj, R., Lehner, T., Agrawal, B. & Rosenbaum, E., Sep 20 2004, In : Proceedings - Design Automation Conference. p. 888-893 6 p.

Research output: Contribution to journalConference article

Logic gates
Equivalent circuits
Mathematical models
Networks (circuits)

On-Chip ESD protection for RF I/Os: Devices, circuits and models

Rosenbaum, E. & Hyvonen, S., Dec 1 2005, In : Proceedings - IEEE International Symposium on Circuits and Systems. p. 1202-1205 4 p., 1464809.

Research output: Contribution to journalConference article

Networks (circuits)

Optimum design for a two-stage CMOS I/O ESD protection circuit

Li, T., Bendix, P., Suh, D., Huh, Y. J., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1998, In : Proceedings - IEEE International Symposium on Circuits and Systems. 2, p. 113-116 4 p.

Research output: Contribution to journalConference article

Resistors
Networks (circuits)
Optimum design
Industry

Small footprint trigger voltage control circuit for mixed-voltage applications

Olson, N., Vashchenko, V., Rosenbaum, E. & Hopper, P., Dec 1 2008, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 196-203 8 p., 4772134.

Research output: Contribution to journalConference article

Voltage control
Networks (circuits)
Electric potential

Study of a CMOS I/O protection circuit using circuit-level simulation

Li, T., Suh, D., Ramaswamy, S., Bendix, P., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1997, In : Annual Proceedings - Reliability Physics (Symposium). p. 333-338 6 p.

Research output: Contribution to journalConference article

Networks (circuits)
Experiments

Substrate modeling and lumped substrate resistance extraction for CMOS ESD/latchup circuit simulation

Li, T., Tsai, C. H., Rosenbaum, E. & Kang, S. M., Jan 1 1999, In : Proceedings - Design Automation Conference. p. 549-554 6 p.

Research output: Contribution to journalConference article

Electrostatic discharge
Circuit simulation
Substrates
Networks (circuits)
Integrated circuit layout

Theory of active clamp response to power-on ESD and implications for power supply integrity

Mertens, R., Thomson, N., Xiu, Y. & Rosenbaum, E., Nov 26 2014, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2014-November, November

Research output: Contribution to journalConference article

Trigger circuits
Clamping devices
Bandwidth
Networks (circuits)

Voltage clamping requirements for ESD protection of inputs in 90nm CMOS technology

Lee, J. & Rosenbaum, E., Dec 1 2008, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 50-58 9 p., 4772114.

Research output: Contribution to journalConference article

Electric breakdown
Gate dielectrics
Electric potential
Transistors
Degradation