1989 …2019
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Research Output 1989 2019

1989

Circuit reliability simulator--Oxide breakdown module

Rosenbaum, E., Lee, P. M., Moazzami, R., Ko, P. K. & Hu, C., 1989, In : Technical Digest - International Electron Devices Meeting. p. 331-334 4 p.

Research output: Contribution to journalArticle

circuit reliability
Oxides
simulators
modules
Simulators
1991

A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Liu, Z. H., Rosenbaum, E., Ko, P. K., Hu, C., Cheng, Y. C., Sodini, C. G., Gross, B. J. & Ma, T. P., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 723-726 4 p. 235321. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

endurance
Oxides
Durability
oxides
Electric breakdown

A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs

Quader, K. N., Li, C., Tu, R., Rosenbaum, E., Ko, P. & Hu, C., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 337-340 4 p. 235384. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot electrons
hot electrons
degradation
damage
Degradation

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Rosenbaum, E., Rofan, R. & Hu, C., Nov 1991, In : IEEE Electron Device Letters. 12, 11, p. 599-601 3 p.

Research output: Contribution to journalArticle

Hot carriers
Oxides
Charge injection
Drain current
Electrons

High-Frequency Time-Dependent Breakdown of SiO2

Rosenbaum, E. & Hu, C., Jun 1991, In : IEEE Electron Device Letters. 12, 6, p. 267-269 3 p.

Research output: Contribution to journalArticle

Electric breakdown
Oxides

Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing

Rosenbaum, E., Moazzami, R. & Hu, C., Jan 1 1991, 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., p. 214-218 5 p. 246679. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
waveforms
breakdown
life (durability)
Testing

The effects of oxide stress waveform on MOSFET performance

Rosenbaum, E., Liu, Z. & Hu, C., Jan 1 1991, International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., p. 719-722 4 p. 235322. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
waveforms
field effect transistors
oxides
Degradation
1993

A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Quader, K. N., Li, C. C., Tu, R., Rosenbaum, E., Ko, P. K. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2245-2254 10 p.

Research output: Contribution to journalArticle

Hot carriers
Drain current
Degradation
Networks (circuits)
Parameter extraction

Berkeley Reliability Tools-BERT

Tu, R. H., Rosenbaum, E., Chan, W. Y., Li, C. C., Minami, E., Quader, K., Keung Ko, P. & Hu, C., Oct 1993, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12, 10, p. 1524-1534 11 p.

Research output: Contribution to journalArticle

Networks (circuits)
SPICE
Simulators
Degradation
Electromigration

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Rosenbaum, E., Liu, Z. & Hu, C., Dec 1993, In : IEEE Transactions on Electron Devices. 40, 12, p. 2287-2295 9 p.

Research output: Contribution to journalArticle

Silicon Dioxide
hole distribution
Oxides
breakdown
Silica
1994

Circuit-level electrothermal simulation techniques for designing output protection devices

Ramaswamy, S., Rosenbaum, E. & Kang, S. M., Dec 1 1994, p. 79-82. 4 p.

Research output: Contribution to conferencePaper

Networks (circuits)
Simulators
Integrated circuits
Computer aided design
Specifications
1995

Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits

Rosenbaum, E. & Hu, C., Aug 1995, In : IEEE Transactions on Semiconductor Manufacturing. 8, 3, p. 370-374 5 p.

Research output: Contribution to journalArticle

Digital circuits
Oxides
CMOS
digital electronics
Simulators

EOS/ESD protection circuit design for deep submicron SOI technology

Ramaswamy, S., Raha, P., Rosenbaum, E. & Kang, S. M., Dec 1 1995, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 212-217 6 p.

Research output: Contribution to journalConference article

circuit protection
insulators
silicon
failure modes
immunity

Fast timing simulation for submicron hot-carrier degradation

Sun, W., Rosenbaum, E. & Kang, S. M., Jan 1 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 65-71 7 p.

Research output: Contribution to journalConference article

Hot carriers
Transistors
CMOS integrated circuits
Degradation
Integrated circuits

Relation between oxide degradation and oxide breakdown

Felsch, C. & Rosenbaum, E., 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 142-148 7 p.

Research output: Contribution to journalArticle

Degradation
Oxides
Electron traps
Charge trapping
1996

Accelerated testing of SiC>2 reliability

Rosenbaum, E., King, J. C. & Hu, C., Dec 1 1996, In : IEEE Transactions on Electron Devices. 43, 1, p. 70-80 11 p.

Research output: Contribution to journalArticle

Electric breakdown
Defects
Testing
Charge trapping
Oxides

Chip-level electrothermal simulator for temperature profile estimation of CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 580-583 4 p.

Research output: Contribution to journalArticle

Simulators
Packaging
Temperature
Networks (circuits)

Circuit-level simulation of CDM-ESD and EOS in submicron MOS devices

Ramaswamy, S., Li, E., Rosenbaum, E. & Kang, S. M., Dec 1 1996, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 316-321 6 p.

Research output: Contribution to journalConference article

simulation
breakdown
simulators
temperature

ETS-A: A new electrothermal simulator for CMOS VLSI circuits

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Mar 11 1996, Proceedings of the 1996 European Conference on Design and Test, EDTC 1996. Association for Computing Machinery, Inc, p. 566-570 5 p. 494357. (Proceedings of the 1996 European Conference on Design and Test, EDTC 1996).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

VLSI circuits
Simulators
Temperature
Integrated circuits

ETS-A: A new electrothermal simulator for CMOS VLSI circuits

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings of European Design and Test Conference. p. 566-570 5 p.

Research output: Contribution to journalConference article

VLSI circuits
Simulators
Packaging
Temperature
MOSFET devices

Hierarchical electromigration reliability diagnosis for VLSI interconnects

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings - Design Automation Conference. p. 752-757 6 p.

Research output: Contribution to journalConference article

Electromigration
Computer aided design
Networks (circuits)

iCET: A complete chip-level thermal reliability diagnosis tool for CMOS VLSI chips

Cheng, Y. K., Teng, C. C., Dharchoudhury, A., Rosenbaum, E. & Kang, S. M., 1996, In : Proceedings - Design Automation Conference. p. 548-551 4 p.

Research output: Contribution to journalArticle

Packaging materials
Networks (circuits)
Transistors
Simulators
Boundary conditions

Improvement on chip-level electrothermal simulator - ILLIADS-T

Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Jan 1 1996, In : Proceedings - IEEE International Symposium on Circuits and Systems. 4, p. 432-435 4 p.

Research output: Contribution to journalConference article

Simulators
Heat transfer
Networks (circuits)
Composite materials

iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., 1996, In : Annual Proceedings - Reliability Physics (Symposium). p. 172-179 8 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction
1997

Circuit-level simulation and layout optimization for deep submicron EOS/ESD output protection device

Li, T., Ramaswamy, S., Rosenbaum, E. & Kang, S. M., Jan 1 1997, In : Proceedings of the Custom Integrated Circuits Conference. p. 159-162 4 p.

Research output: Contribution to journalConference article

Networks (circuits)
Silicon
Hot Temperature

Heat flow analysis for EOS/ESD protection device design in SOI technology

Raha, P., Ramaswamy, S. & Rosenbaum, E., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 3, p. 464-471 8 p.

Research output: Contribution to journalArticle

Heat transfer
Joule heating
Electric lines
Heating
Hot Temperature

ITEM: A temperature-dependent electromigration reliability diagnosis tool

Teng, C. C., Cheng, Y. K., Rosenbaum, E. & Kang, S. M., Dec 1 1997, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16, 8, p. 882-893 12 p.

Research output: Contribution to journalArticle

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction

Mechanism of stress-induced leakage current in MOS capacitors

Rosenbaum, E. & Register, L. F., Dec 1 1997, In : IEEE Transactions on Electron Devices. 44, 2, p. 317-323 7 p.

Research output: Contribution to journalArticle

MOS capacitors
Leakage currents
Electric potential
Field emission
Oxides

New algorithm for circuit-level electrothermal simulation under EOS/ESD stress

Li, T., Tsai, C. H., Huh, Y. J., Rosenbaum, E. & Kang, S. M., Dec 1 1997, p. 130-131. 2 p.

Research output: Contribution to conferencePaper

Simulators
Networks (circuits)
Temperature

Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Dec 1 1997, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 356-365 10 p.

Research output: Contribution to journalArticle

SOI (semiconductors)
thin films
predictions
field effect transistors
film thickness

Study of a CMOS I/O protection circuit using circuit-level simulation

Li, T., Suh, D., Ramaswamy, S., Bendix, P., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1997, In : Annual Proceedings - Reliability Physics (Symposium). p. 333-338 6 p.

Research output: Contribution to journalConference article

Networks (circuits)
Experiments

Time-dependent snapback in thin-film SOI MOSFET's

Raha, P., Miller, J. W. & Rosenbaum, E., Nov 1 1997, In : IEEE Electron Device Letters. 18, 11, p. 509-511 3 p.

Research output: Contribution to journalArticle

Bipolar transistors
Thin films
Electric potential
1998

CMOS hot carrier lifetime improvement from deuterium anneal

Li, E., Rosenbaum, E., Tao, J. & Fang, P., Dec 1 1998, p. 22-23. 2 p.

Research output: Contribution to conferencePaper

Hot carriers
Carrier lifetime
Interface states
Deuterium
Hot electrons

ESD robustness prediction and protection device design in partially depleted SOI technology

Raha, P., Smith, J. C., Miller, J. W. & Rosenbaum, E., Jan 1 1998, In : Microelectronics Reliability. 38, 11, p. 1723-1731 9 p.

Research output: Contribution to journalArticle

Silicon on insulator technology
Silicon
insulators
silicon
predictions

ILLIADS-T: An electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips

Cheng, Y. K., Raha, P., Teng, C. C., Rosenbaum, E. & Kang, S. M., Dec 1 1998, In : IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17, 8, p. 668-681 14 p.

Research output: Contribution to journalArticle

VLSI circuits
Simulators
Packaging
Specifications
Temperature

Modeling, extraction and simulation of CMOS I/O circuits under ESD stress

Li, T., Tsai, C. H., Rosenbaum, E. & Kang, S. M., Jan 1 1998, In : Proceedings - IEEE International Symposium on Circuits and Systems. 6, p. 389-392 4 p.

Research output: Contribution to journalConference article

Networks (circuits)
Computer aided design
Substrates
Simulators

Optimum design for a two-stage CMOS I/O ESD protection circuit

Li, T., Bendix, P., Suh, D., Huh, Y. J., Rosenbaum, E., Kapoor, A. & Kang, S. M., Jan 1 1998, In : Proceedings - IEEE International Symposium on Circuits and Systems. 2, p. 113-116 4 p.

Research output: Contribution to journalConference article

Resistors
Networks (circuits)
Optimum design
Industry
CMOS
electrostatics
simulation
layouts
silicon
1999

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

Register, L. F., Rosenbaum, E. & Yang, K., Jan 18 1999, In : Applied Physics Letters. 74, 3, p. 457-459 3 p.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
Wentzel-Kramer-Brillouin method
silicon
electron impact

EOS/ESD reliability of partially depleted SOI technology

Raha, P., Diaz, C., Rosenbaum, E., Cao, M., Vandevoorde, P. & Greene, W., Dec 1 1999, In : IEEE Transactions on Electron Devices. 46, 2, p. 429-431 3 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Diodes
Simulators
Networks (circuits)

Hot carrier effects in nMOSFETs in 0.1μm CMOS technology

Li, E., Rosenbaum, E., Tao, J., Yeap, G. C. F., Lin, M. R. & Fang, P., Jan 1 1999, Annual Proceedings - Reliability Physics (Symposium). Institute of Electrical and Electronics Engineers Inc., p. 253-258 6 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hot carriers
Bias currents
Carrier lifetime
Deuterium
Metallizing

Interconnect thermal modeling for determining design limits on current density

Chen, D., Li, E., Rosenbaum, E. & Kang, S. M., Jan 1 1999, p. 172-178. 7 p.

Research output: Contribution to conferencePaper

Current density
Geometry
Temperature
Finite element method
Substrates

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Chen, Z., Hess, K., Lee, J., Lyding, J. W., Rosenbaum, E., Kizilyalli, I. & Chetlur, S., Dec 1 1999, In : Technical Digest - International Electron Devices Meeting. p. 85-88 4 p.

Research output: Contribution to journalConference article

Hot carriers
MOSFET devices
Isotopes
transistors
traps

Substrate modeling and lumped substrate resistance extraction for CMOS ESD/latchup circuit simulation

Li, T., Tsai, C. H., Rosenbaum, E. & Kang, S. M., Jan 1 1999, In : Proceedings - Design Automation Conference. p. 549-554 6 p.

Research output: Contribution to journalConference article

Electrostatic discharge
Circuit simulation
Substrates
Networks (circuits)
Integrated circuit layout

Trap-assisted tunneling current through ultra-thin oxide

Wu, J., Register, L. F. & Rosenbaum, E., Jan 1 1999, Annual Proceedings - Reliability Physics (Symposium). IEEE, p. 389-395 7 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron tunneling
Conduction bands
Leakage currents
Cathodes
Oxides
2000

Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Wu, J., Rosenbaum, E., MacDonald, B., Li, E., Tao, J., Tracy, B. & Fang, P., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 27-32 6 p.

Research output: Contribution to journalArticle

Deuterium
Anodes
Hydrogen
Oxides
Metallizing

Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Wu, J., Juliano, P. & Rosenbaum, E., Dec 1 2000, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 287-295 9 p.

Research output: Contribution to journalConference article

breakdown
damage
oxides
pulse duration
traps

Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Voldman, S., Juliano, P., Johnson, R., Schmidt, N., Joseph, A., Furkay, S., Rosenbaum, E., Dunn, J., Harame, D. & Meyerson, B., Jan 1 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 310-316 7 p.

Research output: Contribution to journalArticle

Electrostatic discharge
Heterojunction bipolar transistors
Germanium
Silicon
Failure analysis

Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Voldman, S., Juliano, P., Schmidt, N., Johnson, R., Lanzerotti, L., Joseph, A., Brennan, C., Dunn, J., Harame, D., Rosenbaum, E. & Meyerson, B., Dec 1 2000, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 239-250 12 p.

Research output: Contribution to journalConference article

bipolar transistors
accumulators
heterojunctions
germanium
electrostatics

Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies

Wang, Y., Juliano, P., Joshi, S. & Rosenbaum, E., Dec 1 2000, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 430-436 7 p.

Research output: Contribution to journalConference article

SOI (semiconductors)
diodes
simulators
high current
breakdown