Edmund G Seebauer

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2024

Method Of Controlling Oxygen Vacancy Concentration In A Semiconducting Metal Oxide
Seebauer, E. G. (Inventor), Sep 3 2024, U.S. Patent No. 12080801
Research output: Patent
2018
Composition comprising an engineered defect concentration
Gorai, P. (Inventor) & Seebauer, E. G. (Inventor), Dec 25 2018, U.S. Patent No. 10161062, Apr 21 2016
Research output: Patent
2014
Defect engineering in metal oxides via surfaces
Seebauer, E. G. (Inventor), Oct 28 2014, U.S. Patent No. 8871670, Jan 4 2012
Research output: Patent
2011
Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering
Seebauer, E. G. (Inventor), Jun 28 2011, U.S. Patent No. 7968440
Research output: Patent
2010
Methods for controlling dopant concentration and activation in semiconductor structures
Braatz, R. D. (Inventor), Seebauer, E. G. (Inventor), Jung, M. Y. L. (Inventor) & Gunawan, R. (Inventor), Dec 7 2010, U.S. Patent No. 7846822, Jul 28 2005
Research output: Patent
1997
Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions
Mendicino, M. A. (Inventor) & Seebauer, E. G. (Inventor), May 27 1997, U.S. Patent No. 5633036, Apr 21 1995
Research output: Patent

Research output