Keyphrases
Surface Diffusion
29%
Defect Engineering
26%
Semiconductors
23%
Rutile
22%
Si(111)
22%
Adsorption
21%
Ultra-shallow Junction
21%
Self-diffusion
21%
Annealing
17%
Transient Diffusion
17%
Activation Energy
15%
Pre-exponential Factor
15%
Oxygen Interstitials
15%
TiSi2
15%
Dopant Activation
14%
Interstitial Atoms
14%
High Temperature
13%
Junction Formation
13%
Metal Oxide
12%
Dopant
12%
Chemical Vapor Deposition
12%
Boron
12%
Temperature Effect
11%
Desorption
11%
Microreactor
10%
Semiconductor Surface
10%
Carrier Concentration
9%
Silane
9%
State of Charge
9%
Arsenic
9%
Band Bending
8%
Titanium Tetrachloride
8%
Interstitial Implantation
8%
Order of Magnitude
8%
Photoreflectance
8%
Reactor
8%
Surface Chemistry
8%
Diffusion Measurements
8%
Dopant Diffusion
8%
Transistor
8%
Integrated Circuits
7%
Second Harmonic Microscopy
7%
Adatoms
7%
Reaction Rate
7%
Microelectronics
7%
Adsorbate
7%
Ultra-high Vacuum
6%
Rutile TiO2
6%
Ion Implantation
6%
Laser-induced
6%
Material Science
Surface (Surface Science)
100%
Titanium Dioxide
37%
Silicon
32%
Doping (Additives)
30%
Surface Diffusion
22%
Point Defect
22%
Desorption
20%
Self-Diffusion
16%
Activation Energy
15%
Annealing
15%
Chemical Vapor Deposition
12%
Metal Oxide
12%
Film
11%
ZnO
10%
Oxide Compound
10%
Thin Films
8%
Boron
8%
Carrier Concentration
8%
Density
7%
Transistor
7%
Arsenic
6%
Composite Material
6%
Electronic Circuit
6%
Diffusivity
6%
Chemical State
6%
Silicide
5%
Gallium Arsenide
5%
Crystalline Material
5%
Engineering
Dopants
24%
Activation Energy
24%
Engineering
20%
Interstitial Atom
17%
Enhanced Diffusion
17%
Transients
17%
Interstitial Oxygen
15%
Pre-Exponential Factor
15%
Dopant Activation
14%
Junction Formation
13%
Chemical Vapor Deposition
12%
Arsenic
11%
Vapor Deposition
10%
Photoreflectance
10%
Band Bending
10%
Semiconductor Surface
10%
Harmonics
9%
Room Temperature
9%
Ion Implantation
8%
Mols
8%
Thin Films
8%
Concentration Profile
8%
Charge State
8%
Integrated Circuit
7%
Electric Field
6%
Silicon Dioxide
6%
Shallow Junction
6%
Microelectronics
6%
Rapid Thermal Annealing
6%
Adsorbate
5%
Carrier Concentration
5%
Melting Point
5%
Diffusivity
5%
Harmonic Generation
5%
Energetics
5%