Fingerprint Fingerprint is based on mining the text of the expert's scholarly documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 1 Similar Profiles
photodiodes Physics & Astronomy
avalanches Physics & Astronomy
light emitting diodes Physics & Astronomy
metalorganic chemical vapor deposition Physics & Astronomy
Substrates Chemical Compounds
nitrides Physics & Astronomy
Light emitting diodes Engineering & Materials Science
Nitrides Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 2005 2017

Cubic phase GaN integrated on CMOS-compatible silicon (100)

Liu, R. & Bayram, C. 2017 CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech

Research output: ResearchConference contribution

Epilayers
Electron diffraction
Aspect ratio
Silicon
Experiments

Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on Silicon

Bayram, C. & Liu, R. Dec 1 2017 Semiconductors and Semimetals. Academic Press Inc., Vol. 96, p. 411-435 25 p. (Semiconductors and Semimetals; vol. 96)

Research output: ResearchChapter

gallium nitrides
emitters
photonics
silicon
Silicon

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

Lee, K. T., Bayram, C., Piedra, D., Sprogis, E., Deligianni, H., Krishnan, B., Papasouliotis, G., Paranjpe, A., Aklimi, E., Shepard, K., Palacios, T. & Sadana, D. Jun 27 2017 (Accepted/In press) In : IEEE Electron Device Letters.

Research output: Research - peer-reviewArticle

Substrates
Silicon
Stress relaxation
Epitaxial growth
Oxides

InGaN-based flexible light emitting diodes

Bayram, C. 2017 Gallium Nitride Materials and Devices XII. SPIE, Vol. 10104, 101041Y

Research output: ResearchConference contribution

InGaN
Diode
Semiconductors
Light emitting diodes
light emitting diodes

Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

Park, K., Stroscio, M. A. & Bayram, C. Jun 28 2017 In : Journal of Applied Physics. 121, 24, 245109

Research output: Research - peer-reviewArticle

gallium nitrides
electron mobility
continuums
saturation
electrons