Fingerprint Fingerprint is based on mining the text of the expert's scholarly documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

avalanches Physics & Astronomy
photodiodes Physics & Astronomy
light emitting diodes Physics & Astronomy
Light emitting diodes Engineering & Materials Science
Cysteamine Chemical Compounds
Substrates Engineering & Materials Science
metalorganic chemical vapor deposition Physics & Astronomy
Traffic Accidents Chemical Compounds

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Research Output 2005 2017

Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on Silicon

Bayram, C. & Liu, R. Dec 1 2017 Semiconductors and Semimetals. Academic Press Inc., Vol. 96, p. 411-435 25 p. (Semiconductors and Semimetals; vol. 96)

Research output: Chapter in Book/Report/Conference proceedingChapter

gallium nitrides
Gallium nitride
Phase transitions
emitters
light emitting diodes

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

Lee, K. T., Bayram, C., Piedra, D., Sprogis, E., Deligianni, H., Krishnan, B., Papasouliotis, G., Paranjpe, A., Aklimi, E., Shepard, K., Palacios, T. & Sadana, D. Jun 27 2017 In : IEEE Electron Device Letters.

Research output: Contribution to journalArticle

Substrates
Lutheran Blood-Group System
Isoleucine
High electron mobility transistors
Silicon

InGaN-based flexible light emitting diodes

Bayram, C. 2017 Gallium Nitride Materials and Devices XII. SPIE, Vol. 10104, 101041Y

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cysteamine
Diode
Light emitting diodes
light emitting diodes
Semiconductors

Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

Park, K., Stroscio, M. A. & Bayram, C. Jun 28 2017 In : Journal of Applied Physics. 121, 24, 245109

Research output: Contribution to journalArticle

electrons
electron mobility
saturation
interactions
temperature

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(111) substrate

Perozek, J., Lee, H. P., Krishnan, B., Paranjpe, A., Reuter, K. B., Sadana, D. K. & Bayram, C. Jan 9 2017 In : Journal of Physics D: Applied Physics. 50, 5, 055103

Research output: Contribution to journalArticle

high electron mobility transistors
wafers
High electron mobility transistors
Isoleucine
surface roughness