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Letter
2013

Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors"

Zhang, C., Xu, M., Ye, P. D. & Li, X., Oct 16 2013, In : IEEE Electron Device Letters. 34, 11, 1 p., 6619443.

Research output: Contribution to journalLetter